<p>This study demonstrates the performance of a hydroxyethyl cellulose (HEC) charge trap layer for p-type organic thin-film transistor memory. The HEC charge trap transistor memory (HEC-TM) shows conventional charge trapping characteristics; that is, positive and negative threshold voltage (<i>V</i>_th) shifts after the application of a positive and negative bias, respectively. As the time and amplitude of the gate bias increases, <i>V</i>_th shift increases gradually and saturates. Because the electron trap is relatively more dominant than the hole trap in the hydroxyl group of HEC, a larger shift in <i>V</i>_th and longer memory retention appears when a positive voltage is applied rather than a negative voltage. HEC-TM is immersed and the HEC charge trap layer (HEC-CTL) is dissolved sufficiently with deionized water to validate its water degradability. HEC-TM is expected to be utilized as a biodegradable short-term transistor memory device.</p> Graphic Abstract <p></p>