Scholarlink

<p>Two-dimensional semiconductors such as SnSe<sub>2</sub> hold great promise for electronic and optoelectronic applications. Factors such as the intrinsic carrier concentration and interfacial scattering strongly influence device performance. In this study, SnSe<sub>2</sub>-based field-effect transistors were fabricated with precise thickness control by reactive ion etching. Electrical measurements revealed that reducing the thickness from 300 to 21&#xa0;nm led to an increase in carrier mobility from 3.76 to 26.6&#xa0;cm² V<sup>− 1</sup> s<sup>− 1</sup> and an improvement in conductivity from 0.31 to 7.72&#xa0;S/cm. This enhancement is attributed to a rise in carrier concentration, from 1.48 × 10<sup>18</sup> to 1.66 × 10<sup>19</sup> cm⁻³, along with better screening of interfacial Coulomb potential. Furthermore, the photoresponsivity varied with thickness, with thinner devices exhibiting a peak of 484&#xa0;A/W under a 700-nm laser, compared to 260&#xa0;A/W under a 900-nm laser for thicker devices. These findings highlight the critical role of thickness optimization in fine-tuning the electrical and optoelectronic properties of SnSe<sub>2</sub>-based devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Thickness-Dependent Electrical and Optoelectrical Properties of SnSe2 Field-Effect Transistors

  • 期刊论文

  • 发表日期：

    2025年1月16日

查看全文
  • Han-Woong Choi,
  • Dong Hyun Seo,
  • Ji Won Heo,
  • Sang-Il Kim,
  • TaeWan Kim

摘要

Two-dimensional semiconductors such as SnSe2 hold great promise for electronic and optoelectronic applications. Factors such as the intrinsic carrier concentration and interfacial scattering strongly influence device performance. In this study, SnSe2-based field-effect transistors were fabricated with precise thickness control by reactive ion etching. Electrical measurements revealed that reducing the thickness from 300 to 21 nm led to an increase in carrier mobility from 3.76 to 26.6 cm² V− 1 s− 1 and an improvement in conductivity from 0.31 to 7.72 S/cm. This enhancement is attributed to a rise in carrier concentration, from 1.48 × 1018 to 1.66 × 1019 cm⁻³, along with better screening of interfacial Coulomb potential. Furthermore, the photoresponsivity varied with thickness, with thinner devices exhibiting a peak of 484 A/W under a 700-nm laser, compared to 260 A/W under a 900-nm laser for thicker devices. These findings highlight the critical role of thickness optimization in fine-tuning the electrical and optoelectronic properties of SnSe2-based devices.