To achieve high-quality sputtered amorphous silicon (a-Si) thin films with low argon (Ar) working gas atom content and high film density, the effects of \(\:{P}_{Ar}{D}_{TS}\) on Ar gas content and film density is investigated. Here, \(\:{P}_{Ar}\) is Ar working pressure and \(\:{D}_{TS}\) is target-to-substrate. The findings from this work indicate that the Ar gas content in the films primarily arises from highly energetic reflected Ar ions that bombard growing a-Si thin films at low \(\:{P}_{Ar}{D}_{TS}\:\) values (< 50 Pa·mm). As \(\:{P}_{Ar}{D}_{TS}\) increases, a monotonic decrease in film density is observed. This results well correlates with the declining average energy of sputtered silicon atoms reaching the substrate. Optimal conditions for fabricating sputtered a-Si thin films with both low Ar content and high film density were identified within the \(\:{P}_{Ar}{D}_{TS}\) range of 30–40 Pa·mm. This research could provide valuable insights for researchers seeking to optimize the balance between low working gas content and high film density in sputtered thin films.
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