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<p>The threshold voltage and switching characteristics of transistors are impacted by the overall decrease in charge carrier mobility as the temperature rises. The overall speed, stability, and reliability of electronic circuits may be impacted by these variances. An experimentally calibrated U-shaped channel Tunnel Field-Effect Transistor (TFET) is used in this work to examine the effects of temperature changes from 300 to 400&#xa0;K on its digital and analog performance using a numerical device simulation. Both 0.8&#xa0;V and sub-0.4&#xa0;V supply voltages are investigated in order to determine whether the device is suitable for low-power applications. The findings show that important digital performance metrics like ON-state current (I<sub>ON</sub>), OFF-state current (I<sub>OFF</sub>), I<sub>ON</sub>/I<sub>OFF</sub> ratio, point subthreshold swing (SS<sub>pt</sub>), average subthreshold swing (SS<sub>avg</sub>), threshold voltage (V<sub>T</sub>), and OFF-state leakage power (P<sub>leakage</sub>) as well as analog metrics like transconductance (g<sub>m</sub>), output resistance (r<sub>out</sub>), and intrinsic gain (g<sub>m</sub> × r<sub>out</sub>) are almost constant over the temperature range under investigation. The proposed U-shaped channel TFET is a promising choice for energy-efficient and thermally resilient nanoscale electronic systems because of its exceptional reliability and steady operation, as demonstrated by the observed thermal robustness. A detailed benchmarking study against conventional MOSFETs and state-of-the-art TFET structures further validates the superior low-power digital and analog performance of the proposed TFET.</p>

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Influence of High Temperature on Digital and Analog Performance of Unique U-shaped Channel TFET for 0.8 V and sub-0.4 V Operation

  • 期刊论文

  • 发表日期：

    2025年11月19日

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  • Suman Das,
  • Saumya Das,
  • Swagata Mandal,
  • Biswajit Mahanty,
  • Hashinur Islam

摘要

The threshold voltage and switching characteristics of transistors are impacted by the overall decrease in charge carrier mobility as the temperature rises. The overall speed, stability, and reliability of electronic circuits may be impacted by these variances. An experimentally calibrated U-shaped channel Tunnel Field-Effect Transistor (TFET) is used in this work to examine the effects of temperature changes from 300 to 400 K on its digital and analog performance using a numerical device simulation. Both 0.8 V and sub-0.4 V supply voltages are investigated in order to determine whether the device is suitable for low-power applications. The findings show that important digital performance metrics like ON-state current (ION), OFF-state current (IOFF), ION/IOFF ratio, point subthreshold swing (SSpt), average subthreshold swing (SSavg), threshold voltage (VT), and OFF-state leakage power (Pleakage) as well as analog metrics like transconductance (gm), output resistance (rout), and intrinsic gain (gm × rout) are almost constant over the temperature range under investigation. The proposed U-shaped channel TFET is a promising choice for energy-efficient and thermally resilient nanoscale electronic systems because of its exceptional reliability and steady operation, as demonstrated by the observed thermal robustness. A detailed benchmarking study against conventional MOSFETs and state-of-the-art TFET structures further validates the superior low-power digital and analog performance of the proposed TFET.