Advancements in Van der Waals Heterostructures Based on 2D Semiconductor Materials
摘要
Following the discovery of graphene, two-dimensional layered materials (2DLMs) have become a cornerstone of materials research. These materials, distinguished by weak van der Waals forces holding individual layers together, offer exceptional flexibility for constructing van der Waals heterostructures (vdWHs). By strategically stacking diverse materials such as metals, semiconductors, and insulators, researchers can create novel electronic and optoelectronic devices with tailored functionalities. This review explores the cutting-edge techniques for building vdWH-based P–N junction diodes using various 2D semiconductors. We explore both top-down control and bottom-up growth approaches, addressing the challenges and potential breakthroughs in achieving uniformity, interface cleanliness, and precise feature control. We critically analyze the rectification ratios and photovoltaic characteristics of these 2D material p–n junctions. Furthermore, the review sheds light on the transformative potential of 2DLM-based vdWHs in revolutionizing electronics and optoelectronics, ushering in a new era of material design and technological progress.