Structural, Optical, and Electrical Characteristics of Cu₃N with Respect to Substrate Temperature and N₂ Concentration in Mixed Sputtering Gas

Cu₃N films are investigated utilizing direct current magnetron sputtering from the Cu target in an Ar/N₂ mixed sputtering gas. X-ray diffractive analysis, Ultra-violet absorption spectroscopy, X-ray dispersive spectroscopy, atomic force microscopy, field-emission scanning electron microscopy, Hall measurements, and I–V characteristic measurements are used to investigate the properties of the films. The study findings initially obtained films with a Cu₃N composition at the appropriate substrate temperature of 80 °C. When the N₂:(Ar + N₂) gas ratio is more than 50%, the electrical property of films switches from n-type to p-type. The film obtains the greatest crystal quality and the best p-type electric property at the N₂:(Ar + N₂) gas ratio of 70%, with resistivity, hole concentration, and hole mobility of 1.18 × 10^–2 Ωcm, 9.8 × 10¹⁹ cm⁻³, and 5.4 cm²V⁻¹ s⁻¹, respectively. A p–n Cu₃N homojunction cell has an efficiency of 0.21%.