Numerical Investigation of Zero-Dimensional Freestanding Nanowire FER-AlGaN/GaN HEMTs for Low-Power Applications

The numerical model for AlGaN/GaN High Electron Mobility Transistors (HEMTs) device of Zero-Dimensional Freestanding Nanowire Field-Effect Rectifiers (NW-FER) is developed by utilizing the parabolic approximation approach. This model investigates factors including surface potential, electric field, drain current, transconductance, and noise analysis to evaluate the device’s performance. The Cappy model is introduced to analyze the noise performance for the device with gate length effect on transconductance. The proposed device exhibits a high drain current value of 0.823 (A/mm), and a high transconductance of 0.2965 (S/mm) is achieved in NW-FER-based HEMTs. This analysis demonstrates that the proposed device and model are well applicable for low-noise and High-Frequency applications. A good level of agreement is found when numerical model results are compared to Technology Computer-Aided Design simulation software.