Optimization of organic gas sensor performance through sensing area control
摘要
We systematically investigated how contact geometry and channel length affect the gas-sensing performance of organic field-effect transistor (OFET)-based sensors employing poly (3-hexylthiophene) (P3HT) films without any molecular modification or additive doping. Devices with top-contact (TC) and bottom-contact (BC) architectures were fabricated with channel lengths ranging from 50 to 1000 μm. Gas sensing characteristics—including responsivity, sensitivity, and dynamic response behavior—were evaluated upon exposure to nitrogen dioxide. The results revealed that devices with intermediate channel lengths (~ 200 μm) exhibited the highest sensing performance, attributed to an optimal balance between the sensing area available for gas adsorption and the hole carrier diffusion length. Notably, BC gas sensors consistently outperformed their TC counterparts owing to the active layer’s improved gas accessibility. This study demonstrates that the gas-sensing area-specific optimization of channel length and device structure can substantially optimize gas-sensing performance, offering a facile and scalable strategy for developing high-performance organic gas sensors.
Graphic abstract