Hybrid CuSbSe₂ microrod and 2D material heterojunction for high-performance broadband photodetection
摘要
In this paper, a CuSbSe₂/MoS₂ hybrid heterojunction broadband photodetector is fabricated and its optoelectronic performance is evaluated. The device is fabricated by incorporating solution-processed CuSbSe₂ microrods with several-layer MoS₂ film that are assembled into a Type-II p–n heterojunction structure to facilitate the efficient photon absorption, charge separation and fast charge transport. The hybrid photodetector showed a high peak responsivity of 1.08 ± 0.09 AW⁻¹ and an external quantum efficiency of 86 ± 7% when illuminated by 450 nm light. To our knowledge, this is one of the highest responsivity values recorded for CuSbSe₂ based photodetectors, and is about 10 times greater than that of previously reported CuSbSe₂ single-crystal devices when tested using the same optoelectronic conditions. The response curve was found to be broadband (300–1300 nm) with measurable response even close to the cutoff wavelength (1280 ± 20 nm). The temporal rise and decay times were measured to be 0.48 ± 0.05 and 0.52 ± 0.06 ms, respectively, which were considered as the fast temporal response of the device. Furthermore, the dark current is less than 5 nA, and the noise equivalent power is about