Parylene-Based Memristors in Crossbar Architecture: From Stable Resistive Switching to Synaptic Plasticity
摘要
This study investigates memristive and synaptic properties of parylene (PPX)-based memristors in crossbar geometry for brain-inspired neuromorphic computing applications. We demonstrate Cu/PPX/Au memristors exhibiting stable resistive switching (Ron/Roff > 7 × 105), multilevel operation (16 resistive states), and synaptic plasticity emulation capabilities. The devices successfully implement biosimilar learning rules, demonstrating spike-timing-dependent plasticity (STDP) with up to 1400% conductance modulation for potentiation, along with long-term potentiation/depression (LTP/LTD) featuring precise analog tuning. The developed dual-channel measurement approach effectively minimizes sneak currents in passive crossbar arrays. These results confirm the promising potential of PPX memristors for energy-efficient neuromorphic systems, with prospective applications in spiking neural networks.