Scholarlink

<p>Organic memristive devices are gaining an increasing and considerable interest due to their attractive characteristics and potential applications, spanning from neuromorphic electronics to biosensing. In this work, a low-voltage operating memristive device was fabricated using a printed resistive switching (RS) layer consisting of poly (3,4-ethylene dioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) and poly(vinyl alcohol) (PVA). Scaling of the device dimensions (i.e., 5 and 3 <InlineEquation ID="IEq1"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12668_2025_1994_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>m channel length) proved to be a successful strategy to trigger the memristive behavior of the RS layer. Exposing the RS blend to high humidity, as well as to a fully aqueous electrolyte, enabled low-power (V = ± 1.0 V and I <InlineEquation ID="IEq2"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12668_2025_1994_Article_IEq2.gif" Format="GIF" Height="11" Rendition="HTML" Resolution="72" Type="Linedraw" Width="19" /> </InlineMediaObject> <EquationSource Format="TEX">\(\varvec{\approx }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo mathvariant="bold">≈</mo> </mrow> </math></EquationSource> </InlineEquation> 1 <InlineEquation ID="IEq3"> <InlineMediaObject> <ImageObject Color="BlackWhite" FileRef="12668_2025_1994_Article_IEq1.gif" Format="GIF" Height="13" Rendition="HTML" Resolution="72" Type="Linedraw" Width="17" /> </InlineMediaObject> <EquationSource Format="TEX">\(\varvec{\mu }\)</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold-italic">μ</mi> </mrow> </math></EquationSource> </InlineEquation>A) operation for the device, paving the way for the employment of organic memristive devices in future biosensing applications. On the basis of experimental conditions, the device exhibited either zero-crossing or non-zero-crossing current–voltage hysteresis, further emphasizing its versatile operational characteristics. The experimental findings were further supported by a theoretical model describing the memristive and memcapacitive behavior of the device.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Printed Organic Memristive Devices with Non-Zero-Crossing Hysteresis

  • 期刊论文

  • 发表日期：

    2025年6月24日

查看全文
  • Bajramshahe Shkodra,
  • Kapil Bhardwaj,
  • Mattia Petrelli,
  • Antonio Altana,
  • Luisa Petti,
  • Sandro Carrara,
  • Paolo Lugli

摘要

Organic memristive devices are gaining an increasing and considerable interest due to their attractive characteristics and potential applications, spanning from neuromorphic electronics to biosensing. In this work, a low-voltage operating memristive device was fabricated using a printed resistive switching (RS) layer consisting of poly (3,4-ethylene dioxythiophene):poly (styrene sulfonate) (PEDOT:PSS) and poly(vinyl alcohol) (PVA). Scaling of the device dimensions (i.e., 5 and 3 \(\varvec{\mu }\) μ m channel length) proved to be a successful strategy to trigger the memristive behavior of the RS layer. Exposing the RS blend to high humidity, as well as to a fully aqueous electrolyte, enabled low-power (V = ± 1.0 V and I \(\varvec{\approx }\) ≈ 1 \(\varvec{\mu }\) μ A) operation for the device, paving the way for the employment of organic memristive devices in future biosensing applications. On the basis of experimental conditions, the device exhibited either zero-crossing or non-zero-crossing current–voltage hysteresis, further emphasizing its versatile operational characteristics. The experimental findings were further supported by a theoretical model describing the memristive and memcapacitive behavior of the device.