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<p>CoFe<sub>2</sub>O<sub>4</sub> thin films were deposited at substrate temperatures of 300&#xa0;°C, 325&#xa0;°C, 350&#xa0;°C, and 400&#xa0;°C using the chemical spray pyrolysis method. The effects of substrate temperature on structural, morphological, optical, and photoluminescence properties were thoroughly studied. Optical properties, including band gap energy, optical conductivity, extinction coefficient, refractive index, and dielectric constant, were examined, highlighting notable substrate temperature-dependent variations. X-ray diffraction study demonstrated that increasing substrate temperature increased crystallinity, while scanning electron microscopy revealed temperature-dependent morphological evolution. UV–Vis spectroscopy (UV–Vis) revealed an optical band gap between 3.0 and 4.1&#xa0;eV, along with enhanced optical conductivity in the 300–450&#xa0;nm region. Photoluminescence spectra showed broad visible emissions caused by defect-related radiative recombination, with emission intensity and spectrum distribution highly controlled by substrate temperature. CoFe<sub>2</sub>O<sub>4</sub> thin films are suitable for optoelectronic applications due to their cool-white emission characteristics, proven by chromaticity analysis.</p> Graphical abstract <p></p>

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Defect-driven photoluminescence and colour tunability in CoFe2O4 thin films for optoelectronic applications

  • 期刊论文

  • 发表日期：

    2026年7月23日

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  • Jayashree Patra,
  • V. K. Verma

摘要

CoFe2O4 thin films were deposited at substrate temperatures of 300 °C, 325 °C, 350 °C, and 400 °C using the chemical spray pyrolysis method. The effects of substrate temperature on structural, morphological, optical, and photoluminescence properties were thoroughly studied. Optical properties, including band gap energy, optical conductivity, extinction coefficient, refractive index, and dielectric constant, were examined, highlighting notable substrate temperature-dependent variations. X-ray diffraction study demonstrated that increasing substrate temperature increased crystallinity, while scanning electron microscopy revealed temperature-dependent morphological evolution. UV–Vis spectroscopy (UV–Vis) revealed an optical band gap between 3.0 and 4.1 eV, along with enhanced optical conductivity in the 300–450 nm region. Photoluminescence spectra showed broad visible emissions caused by defect-related radiative recombination, with emission intensity and spectrum distribution highly controlled by substrate temperature. CoFe2O4 thin films are suitable for optoelectronic applications due to their cool-white emission characteristics, proven by chromaticity analysis.

Graphical abstract