<p>This work used sputtering for the growth of single and multilayered thin films based on chromium, molybdenum, silver, and indium tin oxide. The thin film properties were compared at different structures, including a single layer, a bilayer (ITO/metal), three layers (ITO/metal/ITO), and four layers (ITO/metal–metal/ITO). The properties were examined using different techniques. Most of the materials show high transparency, particularly the samples with a lower thickness, which reached &gt; 85% in the visible range. The optical transmittance decreases with the augmentation of thickness and number of layers. ITO/Cr recorded the highest transmittance, which reached 95%. The grain size of all structures varied with thickness and number of layers, where every material has its own growth. The largest grain size was obtained by ITO, which is 46.03&#xa0;nm. This is because the ITO atoms grow for a longer time, which produces a larger grain. Similarly to the electrical resistivity, which changed with every structure. While the four-layer structures show the lowest resistivity, including the ITO/Mo-Ag/ITO (7.2 × 10⁻⁴&#xa0;Ω.cm), followed by the ITO/Cr–Ag/ITO (7.6 × 10⁻⁴&#xa0;Ω.cm). The maximum figure of merit Φ_TC achieved was 1.69 × 10⁻³&#xa0;Ω⁻¹ by IMAI, then 1.64 × 10⁻³&#xa0;Ω⁻¹ by ICAI. Both structures, IMAI and ICAI, have suitable properties that can replace and reduce the amount of the ITO for transparent conducting applications. This research contributes to the development of transparent conducting materials for photovoltaic applications by minimising light reflections, electric contact losses, and the use of indium.</p>