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<p>This work presents a theoretical model describing the temperature and magnetic-field dependence of the interband magneto-optical absorption coefficient in direct-bandgap semiconductor quantum wells. The model is based on the two-dimensional joint density of states in a quantizing magnetic field and incorporates thermal broadening effects. An analytical expression for the absorption coefficient is derived as a function of photon energy, magnetic field strength, temperature, and quantum-well thickness. The approach explains the oscillatory structure of the absorption spectrum arising from Landau level quantization and its gradual suppression with increasing temperature. Numerical simulations performed for InGaAs/GaAs and CdMnTe quantum wells show good agreement with available experimental data. The proposed model provides a useful framework for analyzing and designing magneto-optical semiconductor devices operating under varying temperature and magnetic-field conditions.</p>

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Modeling the temperature dependence of magneto-optical absorption coefficients in nanostructured semiconductors

  • 期刊论文

  • 发表日期：

    2026年3月8日

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  • U. I. Erkaboev,
  • R. G. Rakhimov,
  • N. A. Sayidov

摘要

This work presents a theoretical model describing the temperature and magnetic-field dependence of the interband magneto-optical absorption coefficient in direct-bandgap semiconductor quantum wells. The model is based on the two-dimensional joint density of states in a quantizing magnetic field and incorporates thermal broadening effects. An analytical expression for the absorption coefficient is derived as a function of photon energy, magnetic field strength, temperature, and quantum-well thickness. The approach explains the oscillatory structure of the absorption spectrum arising from Landau level quantization and its gradual suppression with increasing temperature. Numerical simulations performed for InGaAs/GaAs and CdMnTe quantum wells show good agreement with available experimental data. The proposed model provides a useful framework for analyzing and designing magneto-optical semiconductor devices operating under varying temperature and magnetic-field conditions.