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<p>In this study, we investigated the main electrical characteristics such as ideality factors (<i>n</i>), barrier heights (Φ<sub>bo</sub>) and series resistances (<i>R</i><sub><i>S</i></sub>) of the Au/<i>n</i>-type Si with SiO<sub>2</sub> interface semiconductor structures using current–voltage (<i>I-V</i>) and capacitance–voltage (<i>C-V</i>) measurements at room temperature. The main electrical parameters obtained using thermionic emission (<i>TE</i>) theory, Cheung and Norde methods were compared with each other. It was seen that the electrical values obtained using the Norde method were larger than those obtained using the <i>TE</i> and Cheung methods. The barrier height value was obtained from the capacitance–voltage characteristics and it was seen that (Φ<sub><i>CV</i></sub> = 0.953&#xa0;eV) was greater than (Φ<sub><i>IV</i></sub> = 0.782&#xa0;eV). Furthermore, the energy distribution of interface state densities were determined by means of Card and Rhoderick. It was seen that the series resistance and interface states have a significant effect on the electrical characteristics of the Au/<i>n</i>-Si structures with SiO<sub>2</sub> interlayer.</p>

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Analysis of the electrical characteristics and interface state densities of Au/n-type Si metal structures with SiO2 interlayer

  • 期刊论文

  • 发表日期：

    2026年3月12日

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  • Halil Seymen,
  • Osman Doğmuş,
  • Şükrü Karataş

摘要

In this study, we investigated the main electrical characteristics such as ideality factors (n), barrier heights (Φbo) and series resistances (RS) of the Au/n-type Si with SiO2 interface semiconductor structures using current–voltage (I-V) and capacitance–voltage (C-V) measurements at room temperature. The main electrical parameters obtained using thermionic emission (TE) theory, Cheung and Norde methods were compared with each other. It was seen that the electrical values obtained using the Norde method were larger than those obtained using the TE and Cheung methods. The barrier height value was obtained from the capacitance–voltage characteristics and it was seen that (ΦCV = 0.953 eV) was greater than (ΦIV = 0.782 eV). Furthermore, the energy distribution of interface state densities were determined by means of Card and Rhoderick. It was seen that the series resistance and interface states have a significant effect on the electrical characteristics of the Au/n-Si structures with SiO2 interlayer.