Comparative study on the structural and optical properties of as-deposited and annealedβ-In2S3 thin films
摘要
Indium sulfide thin films were deposited using the spray pyrolysis technique at 340 °C with a sulfur-to-indium (S/In) molar ratio of 3.5. Subsequently, the as-deposited films were annealed in nitrogen (N2) at 400 °C for 2 h. A comparative analysis shows that both the as-deposited and annealed films exhibit a polycrystalline structure, with a preferred orientation along the (400) plane. Furthermore, following the annealing process, a mixture of cubic and tetragonal phases was observed. The coherent scattering region size was approximately 55 nm for the as-deposited thin films and increased to around 81 nm after annealing. Optical analysis exhibits that transmittance in visible and near infrared regions exceeds 75% for annealed film. The band gap value increases slightly from2.56 to 2.59 eV with annealing. The optical properties further indicate that the refractive index dispersion data follow the single oscillator behavior described by the Wemple-DiDomenico model. Based on this model, key dispersion parameters, including the single oscillator energy (E0) and the dispersion energy (Ed), were calculated.