<p>Perovskite-structured semiconductors have attracted significant attention due to their low-cost material constituents and simple solution-fabrication processes. This study addresses two major issues hindering the commercial implementation of Pb-based hybrid inorganic halide perovskites: instability and lead toxicity. To reduce toxicity, lead was replaced with bismuth, rubidium, cesium, and holmium were used instead of organic cations to enhance material stability. Cesium-bismuth-iodide (Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>), rubidium-bismuth-iodide (Rb<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>), and holmium-bismuth-iodide (Ho<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>) powders were synthesized using a chemical precipitation method. The structural properties were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), while Fourier-transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–Vis) were employed to identify functional groups and optical characterization. From the structural analysis, parameters such as crystallite phases, crystallite size, strain, microstrain, dislocation density, and crystallinity were calculated using the XRD pattern. Additionally, the crystallite size was calculated using Williamson-Hall analysis and Scherrer's formula. SEM studies demonstrated the formation of aggregate crystals of various sizes. The optical absorption and bandgap were determined using Tauc plots from the UV–Vis spectra. The calculated bandgaps were 2.75, 2.63, and 2.96&#xa0;eV for Cs<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub>, Rb<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> and Ho<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> perovskites, respectively. As no previous reports on Ho<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> perovskite exist, this study marks the first exploration of the synthesis and analysis of Ho<sub>3</sub>Bi<sub>2</sub>I<sub>9</sub> perovskite. Our results indicated that the prepared perovskite-structured semiconductors are suitable for optoelectronic device applications.</p>

错误:搜索内容不能为空,请输入英文关键词
错误:关键词超出字数限制,请精简
高级检索

Synthesis, structural and optical properties of Cs3Bi2I9, Rb3Bi2I9 and Ho3Bi2I9 perovskite-structured semiconductors for optoelectronic applications

  • N. Gopinathan,
  • S. Sathik Basha,
  • M. Mubeen,
  • R. N. Jayaprakash,
  • R. Mariappan,
  • G. Melwin,
  • J. Subhash

摘要

Perovskite-structured semiconductors have attracted significant attention due to their low-cost material constituents and simple solution-fabrication processes. This study addresses two major issues hindering the commercial implementation of Pb-based hybrid inorganic halide perovskites: instability and lead toxicity. To reduce toxicity, lead was replaced with bismuth, rubidium, cesium, and holmium were used instead of organic cations to enhance material stability. Cesium-bismuth-iodide (Cs3Bi2I9), rubidium-bismuth-iodide (Rb3Bi2I9), and holmium-bismuth-iodide (Ho3Bi2I9) powders were synthesized using a chemical precipitation method. The structural properties were characterized by X-ray diffraction (XRD) and scanning electron microscopy (SEM), while Fourier-transform infrared spectroscopy (FT-IR) and ultraviolet–visible spectroscopy (UV–Vis) were employed to identify functional groups and optical characterization. From the structural analysis, parameters such as crystallite phases, crystallite size, strain, microstrain, dislocation density, and crystallinity were calculated using the XRD pattern. Additionally, the crystallite size was calculated using Williamson-Hall analysis and Scherrer's formula. SEM studies demonstrated the formation of aggregate crystals of various sizes. The optical absorption and bandgap were determined using Tauc plots from the UV–Vis spectra. The calculated bandgaps were 2.75, 2.63, and 2.96 eV for Cs3Bi2I9, Rb3Bi2I9 and Ho3Bi2I9 perovskites, respectively. As no previous reports on Ho3Bi2I9 perovskite exist, this study marks the first exploration of the synthesis and analysis of Ho3Bi2I9 perovskite. Our results indicated that the prepared perovskite-structured semiconductors are suitable for optoelectronic device applications.