<p>This investigation presents the synthesis and comprehensive characterization of nanostructured Cd<sub>1−x</sub>Mn<sub>x</sub>S (x = 0.2) thin films fabricated via the chemical bath deposition technique, employing varied deposition durations from 30 to 120&#xa0;min. XRD analysis revealed the polycrystalline nature of the films, with a prominent (111) diffraction peak corresponding to a cubic zinc blende crystal structure, which was further confirmed by HRTEM analysis. FESEM analysis revealed a uniform, crack-free, and densely packed surface morphology with nearly spherical grains uniformly distributed over the substrate, accompanied by a decrease in grain size from 154.04 ± 0.84&#xa0;nm to 118.72 ± 0.19&#xa0;nm as the deposition time increased. UV–VIS spectroscopy revealed high optical transmittance, ranging from ~ 80 to 90%, and showed that the optical band gap energy decreased from 2.793 ± 0.002&#xa0;eV to 2.482 ± 0.001&#xa0;eV with increasing deposition duration. EDX confirms the presence of Cd, Mn, and S elements in the samples, validating their successful incorporation into the thin films. Furthermore, XPS analysis reveals the chemical states and spin–orbit splitting of the constituent elements. The I–V characteristics demonstrate semiconducting behavior, with conductivity increasing with deposition duration. These findings highlight the potential of Cd<sub>1−x</sub>Mn<sub>x</sub>S thin films for optoelectronic applications.</p>

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Effect of deposition time on the structural, optical, and electrical properties of chemically deposited Cd1−xMnxS thin films

  • Himanshu Sharma Pathok,
  • Alok Kumar Das,
  • Prasanta Kumar Saikia

摘要

This investigation presents the synthesis and comprehensive characterization of nanostructured Cd1−xMnxS (x = 0.2) thin films fabricated via the chemical bath deposition technique, employing varied deposition durations from 30 to 120 min. XRD analysis revealed the polycrystalline nature of the films, with a prominent (111) diffraction peak corresponding to a cubic zinc blende crystal structure, which was further confirmed by HRTEM analysis. FESEM analysis revealed a uniform, crack-free, and densely packed surface morphology with nearly spherical grains uniformly distributed over the substrate, accompanied by a decrease in grain size from 154.04 ± 0.84 nm to 118.72 ± 0.19 nm as the deposition time increased. UV–VIS spectroscopy revealed high optical transmittance, ranging from ~ 80 to 90%, and showed that the optical band gap energy decreased from 2.793 ± 0.002 eV to 2.482 ± 0.001 eV with increasing deposition duration. EDX confirms the presence of Cd, Mn, and S elements in the samples, validating their successful incorporation into the thin films. Furthermore, XPS analysis reveals the chemical states and spin–orbit splitting of the constituent elements. The I–V characteristics demonstrate semiconducting behavior, with conductivity increasing with deposition duration. These findings highlight the potential of Cd1−xMnxS thin films for optoelectronic applications.