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<p>A novel single crystal of sulphamic acid-doped beta-succinic acid (SA-BSA) was successfully grown using the slow evaporation method, performed at ambient conditions with double-distilled water as the solvent. The structure of the grown crystal was determined using single-crystal X-ray diffraction (XRD), revealing a monoclinic crystal system. Elemental composition was verified using Energy Dispersive X-ray Analysis (EDAX), confirming the presence of the expected elements. Fourier Transform Infrared Spectroscopy (FTIR) was used to identify the functional groups of the crystal. Optical properties were investigated via UV–visible spectroscopy revealed a transmittance cut-off at 322&#xa0;nm. The optical band gap, estimated from Tauc’s plot, was found to be 3.71&#xa0;eV. Thermogravimetric-Differential Thermal Analysis (TG/DTA) demonstrated that the crystal has the melting point at 195&#xa0;°C. Two distinct endothermic peaks were observed, indicating phase transitions and decomposition events. Photoluminescence (PL) studies reveal the green light emission, suggesting its potential for optoelectronic applications. Cyclic voltammetry study was performed at varying scan rates demonstrated promising specific capacitance, highlighting the grown SA-BSA crystal’s potential for energy storage applications. Impedance analysis was performed and from Nyquist plot, bulk resistance and grain boundary were clearly observed. The detailed results and discussion of the grown single crystal of SA-BSA are presented in this communication.</p>

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Growth and characterization of sulphamic acid-doped beta-succinic acid crystal for optoelectronic devices and supercapacitors

  • 期刊论文

  • 发表日期：

    2026年2月2日

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  • A. Sweety Gracia,
  • D. Jencylin Navarani,
  • P. Selvarajan

摘要

A novel single crystal of sulphamic acid-doped beta-succinic acid (SA-BSA) was successfully grown using the slow evaporation method, performed at ambient conditions with double-distilled water as the solvent. The structure of the grown crystal was determined using single-crystal X-ray diffraction (XRD), revealing a monoclinic crystal system. Elemental composition was verified using Energy Dispersive X-ray Analysis (EDAX), confirming the presence of the expected elements. Fourier Transform Infrared Spectroscopy (FTIR) was used to identify the functional groups of the crystal. Optical properties were investigated via UV–visible spectroscopy revealed a transmittance cut-off at 322 nm. The optical band gap, estimated from Tauc’s plot, was found to be 3.71 eV. Thermogravimetric-Differential Thermal Analysis (TG/DTA) demonstrated that the crystal has the melting point at 195 °C. Two distinct endothermic peaks were observed, indicating phase transitions and decomposition events. Photoluminescence (PL) studies reveal the green light emission, suggesting its potential for optoelectronic applications. Cyclic voltammetry study was performed at varying scan rates demonstrated promising specific capacitance, highlighting the grown SA-BSA crystal’s potential for energy storage applications. Impedance analysis was performed and from Nyquist plot, bulk resistance and grain boundary were clearly observed. The detailed results and discussion of the grown single crystal of SA-BSA are presented in this communication.