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<p>Bismuth ferrite (BiFeO<sub>3</sub>) is a promising candidate for magnetoelectric spin–orbit (MESO) devices due to its intriguing magnetoelectric properties. This study employs spin-polarized DFT + U calculations to enhance the magnetoelectric response of co-doped BiFeO<sub>3</sub> (Bi<sub>1-<i>α</i></sub>La<sub><i>α</i></sub>Fe<sub>1-<i>β</i></sub>X<sub><i>β</i></sub>O<sub>3</sub>, where X = Co, Ni, Mn, or Ti) in the hexagonal phase for spintronic random-access memory (RAM) applications. The results indicate that all co-doped systems exhibit 100% spin polarization, identifying them as excellent candidates for data transfer. Among the investigated dopants, LaTi co-doping yielded the lowest magnetization (0.93&#xa0;MA/m) and a reduced magnetoelectric coupling coefficient (<i>α</i> = 1.95 × 10<sup>−9</sup>&#xa0;s/m), corresponding to a lower magnetoelectric force of 0.195&#xa0;mT. In contrast, LaMn co-doping demonstrated the highest structural stability, with a Gibbs free energy of −1.78 × 10<sup>5</sup>&#xa0;eV and a total magnetic moment of 9.71&#xa0;<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({\mu }_{B}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mi>μ</mi> <mi>B</mi> </msub> </math></EquationSource> </InlineEquation>. This system also exhibited a magnetization of 2.40&#xa0;MA/m and a significantly enhanced magnetoelectric effect, with a coupling coefficient of <i>α</i> = 5.03 × 10<sup>−9</sup>&#xa0;s/m and a higher magnetoelectric force of 0.503 mT, making it particularly suitable for data transfer in spintronic RAM.</p>

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Optimized magnetoelectric response of doped BFO in hexagonal phase for data transfer

  • 期刊论文

  • 发表日期：

    2025年11月8日

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  • Muhammad Tariq,
  • Albadrawy Abo-Elnasr,
  • Hosam O. Elansary,
  • Shail Mumtaz,
  • Ibtihal M. Alsalamah

摘要

Bismuth ferrite (BiFeO3) is a promising candidate for magnetoelectric spin–orbit (MESO) devices due to its intriguing magnetoelectric properties. This study employs spin-polarized DFT + U calculations to enhance the magnetoelectric response of co-doped BiFeO3 (Bi1-αLaαFe1-βXβO3, where X = Co, Ni, Mn, or Ti) in the hexagonal phase for spintronic random-access memory (RAM) applications. The results indicate that all co-doped systems exhibit 100% spin polarization, identifying them as excellent candidates for data transfer. Among the investigated dopants, LaTi co-doping yielded the lowest magnetization (0.93 MA/m) and a reduced magnetoelectric coupling coefficient (α = 1.95 × 10−9 s/m), corresponding to a lower magnetoelectric force of 0.195 mT. In contrast, LaMn co-doping demonstrated the highest structural stability, with a Gibbs free energy of −1.78 × 105 eV and a total magnetic moment of 9.71  \({\mu }_{B}\) μ B . This system also exhibited a magnetization of 2.40 MA/m and a significantly enhanced magnetoelectric effect, with a coupling coefficient of α = 5.03 × 10−9 s/m and a higher magnetoelectric force of 0.503 mT, making it particularly suitable for data transfer in spintronic RAM.