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<p>In this research work, Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> layers were created at 180 <sup>O</sup>C using the spray pyrolysis process. The X-ray diffraction analysis indicated that the Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> layers exhibited a polycrystalline structure consistent with the Sb<sub>2</sub>S<sub>3</sub> single phase. The X-ray photoelectron spectroscopy confirmed the elemental identification of the Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> layers. Furthermore, the optical characteristics of the Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> films have been analyzed utilizing transmission and reflection data. The refractive index of the Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> samples rises from 3.34 to 5.96 when the Al percentage is boosted from 4 to 12 wt%. The study of the energy gap (<i>E</i><sub><i>g</i></sub>) of the Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> layers refers to the existence of direct optical transitions, and the energy gap associated with this transition has been decreased from 1.57 to 1.42&#xa0;eV by boosting the Al concentration. The refractive index spectra display a boost in the refractive index by augmenting the Al content. The analysis of refractive index dispersion was conducted utilizing the Wemple-Di-Domenico model. The single oscillator energy (<i>E</i><sub><i>o</i></sub>) showed a decrease from 1.94&#xa0;eV to 1.73&#xa0;eV, while the dispersion energy (<i>E</i><sub><i>d</i></sub>) also decreased from 13.61&#xa0;eV to 17.06&#xa0;eV as the Al content increased. The nonlinear optical parameters of the Sb<sub>2</sub>S<sub>3</sub> and Al-doped Sb<sub>2</sub>S<sub>3</sub> samples were increased by boosting the Al concentration. The hot probe experiment confirmed that the Al-doped Sb<sub>2</sub>S<sub>3</sub> layers have p-type conductivity.</p>

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Synthesis and characterization of the Al: Sb2S3 thin films: Impact of Aluminum doping on the structural, optical, and optoelectrical properties

  • 期刊论文

  • 发表日期：

    2025年9月3日

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  • Abdullah Alsulami

摘要

In this research work, Sb2S3 and Al-doped Sb2S3 layers were created at 180 OC using the spray pyrolysis process. The X-ray diffraction analysis indicated that the Sb2S3 and Al-doped Sb2S3 layers exhibited a polycrystalline structure consistent with the Sb2S3 single phase. The X-ray photoelectron spectroscopy confirmed the elemental identification of the Sb2S3 and Al-doped Sb2S3 layers. Furthermore, the optical characteristics of the Sb2S3 and Al-doped Sb2S3 films have been analyzed utilizing transmission and reflection data. The refractive index of the Sb2S3 and Al-doped Sb2S3 samples rises from 3.34 to 5.96 when the Al percentage is boosted from 4 to 12 wt%. The study of the energy gap (Eg) of the Sb2S3 and Al-doped Sb2S3 layers refers to the existence of direct optical transitions, and the energy gap associated with this transition has been decreased from 1.57 to 1.42 eV by boosting the Al concentration. The refractive index spectra display a boost in the refractive index by augmenting the Al content. The analysis of refractive index dispersion was conducted utilizing the Wemple-Di-Domenico model. The single oscillator energy (Eo) showed a decrease from 1.94 eV to 1.73 eV, while the dispersion energy (Ed) also decreased from 13.61 eV to 17.06 eV as the Al content increased. The nonlinear optical parameters of the Sb2S3 and Al-doped Sb2S3 samples were increased by boosting the Al concentration. The hot probe experiment confirmed that the Al-doped Sb2S3 layers have p-type conductivity.