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<p>6H-Silicon carbide (6H-SiC) is widely used in various fields, particularly power electronics, due to its high resistance to voltage and current under extreme environmental conditions. A Schottky diode with a silicon carbide base and an organic conductive poly(3-hexylthiophene) (P3HT) polymer interface, structured as Au/P3HT:n-6H-SiC/Au, was fabricated, and its electrical properties were characterized over a temperature range of 80–400&#xa0;K. The ideality factor (n), barrier height (Φ<sub>b</sub>), and saturation current (I<sub>o</sub>) were calculated at each temperature using the temperature-dependent current–voltage (I–V) analysis. The series resistance (R<sub>s</sub>) was determined using Cheung’s method, Norde’s method. Additionally, the mean barrier height (<InlineEquation ID="IEq1"> <EquationSource Format="TEX">\({\overline{\Phi } }_{bo}\)</EquationSource> <EquationSource Format="MATHML"><math> <msub> <mover> <mi mathvariant="normal">Φ</mi> <mo>¯</mo> </mover> <mrow> <mi mathvariant="italic">bo</mi> </mrow> </msub> </math></EquationSource> </InlineEquation>) standard deviation (σ<sub>0</sub>), and voltage constants (ρ<sub>2</sub> and ρ<sub>3</sub>) were extracted through Gaussian distribution analysis of the barrier. It was demonstrated that the barrier height at the interface exhibits an inhomogeneous nature rather than a uniform structure. The barrier was found to consist of two distinct regions, characterized by a double Gaussian distribution. Furthermore, the Richardson constant for the 6H-SiC semiconductor was calculated as 155.59&#xa0;A&#xa0;cm<sup>−2</sup>&#xa0;K<sup>−2</sup>, which was found to be in perfect agreement with the theoretically known value for 6H-SiC.</p>

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Double Gaussian distribution of inhomogeneous barrier heights in P3HT/n-6H-SiC Schottky diode

  • 期刊论文

  • 发表日期：

    2025年11月15日

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  • Tamer Güzel

摘要

6H-Silicon carbide (6H-SiC) is widely used in various fields, particularly power electronics, due to its high resistance to voltage and current under extreme environmental conditions. A Schottky diode with a silicon carbide base and an organic conductive poly(3-hexylthiophene) (P3HT) polymer interface, structured as Au/P3HT:n-6H-SiC/Au, was fabricated, and its electrical properties were characterized over a temperature range of 80–400 K. The ideality factor (n), barrier height (Φb), and saturation current (Io) were calculated at each temperature using the temperature-dependent current–voltage (I–V) analysis. The series resistance (Rs) was determined using Cheung’s method, Norde’s method. Additionally, the mean barrier height ( \({\overline{\Phi } }_{bo}\) Φ ¯ bo ) standard deviation (σ0), and voltage constants (ρ2 and ρ3) were extracted through Gaussian distribution analysis of the barrier. It was demonstrated that the barrier height at the interface exhibits an inhomogeneous nature rather than a uniform structure. The barrier was found to consist of two distinct regions, characterized by a double Gaussian distribution. Furthermore, the Richardson constant for the 6H-SiC semiconductor was calculated as 155.59 A cm−2 K−2, which was found to be in perfect agreement with the theoretically known value for 6H-SiC.