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<p>The defect states of thin films of the GeS compound were investigated. Thin films with thicknesses of d = 250, 500, and 750&#xa0;nm were obtained using the thermal evaporation method. The Doppler Broadening Spectroscopy (DBS) method was employed to study the defects. It was determined that the nature of the defects remains consistent regardless of the thickness of the thin films and that they are vacancy-type defects. Furthermore, it was identified that for thin films with a thickness of d = 500&#xa0;nm<b>,</b> the S parameter reaches its maximum value, indicating the highest concentration of defects. This process corresponds to the completion of phase formation in GeS thin films with a thickness of d = 750&#xa0;nm<b>.</b></p>

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Study of germanium sulfide thin films by doppler broadening spectroscopy

  • 期刊论文

  • 发表日期：

    2025年7月31日

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  • S. Samadov,
  • A. Sidorin,
  • A. Alekperov,
  • N. V. M. Trung,
  • T. G. Mammadov,
  • A. O. Dashdemirov,
  • A. S. Abiyev,
  • S. H. Jabarov

摘要

The defect states of thin films of the GeS compound were investigated. Thin films with thicknesses of d = 250, 500, and 750 nm were obtained using the thermal evaporation method. The Doppler Broadening Spectroscopy (DBS) method was employed to study the defects. It was determined that the nature of the defects remains consistent regardless of the thickness of the thin films and that they are vacancy-type defects. Furthermore, it was identified that for thin films with a thickness of d = 500 nm, the S parameter reaches its maximum value, indicating the highest concentration of defects. This process corresponds to the completion of phase formation in GeS thin films with a thickness of d = 750 nm.