Band gap engineering for highly efficient dye sensitized solar cell using graphene-ZnO nanorods
摘要
In the present work, zinc oxide (ZnO) with few-layer graphene was investigated for dye-sensitized solar cells (DSSCs). Four architectures were fabricated using indium tin oxide (ITO)/0.1 wt% graphene-ZnO/aluminum (Al), ITO/0.2 wt% graphene-ZnO/Al, ITO/0.3 wt% graphene-ZnO/Al, and ITO/0.4 wt% graphene-ZnO/Al composites. Few-layer graphene and ZnO were synthesized using electrochemical exfoliation and the sol–gel method. The prepared composites were characterized using X-ray diffraction (XRD), field scanning electron microscopy (FESEM), transmission electron microscopy (TEM), thermogravimetry differential thermal analysis (TG–DTA), photoluminescence (PL), and ultraviolet–visible (UV–Vis) spectroscopy. The ITO/0.4 wt% graphene-ZnO/Al composite-based DSSC exhibited a power conversion efficiency of 11.31%, which is significantly higher than that of the 0.1 wt%, 0.2 wt%, and 0.3 wt% DSSCs. The enhancement in various optoelectronic properties is attributed to the presence of few layer graphene, which facilitates efficient transports of photogenerated electron.