Temperature and hydrostatic pressure effect on impurity states in Ga_xIn_1−xAs/GaAs cylindrical quantum well wire

Under the theoretical framework of effective mass envelope function approximation, the impurity state energy is calculated in In_xGa_1−xAs/GaAs cylindrical quantum well wire by the plane wave expansion method, and the effects of temperature and hydrostatic pressure are considered. The variations of the impurity state energy with radius and impurity position are calculated for different temperatures and hydrostatic pressures. To further analyze the effect of temperature and hydrostatic pressure on the impurity state, the variations of the impurity state energy with temperature and hydrostatic pressure are calculated. When temperature is applied, the impurity state energy decreases, but the temperature effect is very weak. When hydrostatic pressure is applied, impurity state energy increases.