The electrical characterization of V₂O₅/p-Si prepared by spray pyrolysis technique using perfume atomizer

Vanadium pentoxide (V₂O₅) thin films were deposited onto glass and p-type silicon substrates via spray pyrolysis by using a perfume atomizer. The surface morphology of thin film was analyzed by atomic force microscopy. Structural and optical characteristics of the deposited thin films were assessed through X-ray diffraction and UV–Vis spectroscopy, respectively. The V₂O₅ thin films were determined to be polycrystalline in nature, exhibiting a band gap of 2.20 eV. The semiconductor properties of V₂O₅ thin films deposited on glass substrates were investigated through electrical measurements conducted by using a two-probe system across a range of temperatures. Key electrical parameters such as sheet resistance, conductivity, and activation energy were deduced from these measurements. Furthermore, the electrical characteristics of the Ag/V₂O₅/p-Si heterojunctions were scrutinized via current–voltage (I–V) and capacitance–voltage (C–V) analyses, which exhibited pronounced rectifying behavior in the Ag/V₂O₅/p-Si device structure.