Thermoelectric behavior of Tl₂GaInTe₄ crystals

The thermoelectric power of the quaternary thallium chalcogenide Tl₂GaInTe₄ crystals has been studied in the temperature range of 191 and 597°K. The current investigation uses a mix of electrical and thermal measurements to determine various physical parameters. The conductivity of the crystals was determined as p-type. The majority carriers are p-type, and these carriers have an effective mass of 1.92 × 10⁻³¹ kg. The minority carriers are n-type, with an effective mass of 1.24 × 10⁻³⁵ kg. The hole and electron mobilities are both at room temperature were 532,950 cm²/Vs and 93,500 cm²/Vs, respectively. For holes, the diffusion coefficient, relaxation time, and diffusion length were determined to be 0.24 cm²/s, 1.12 × 10⁻⁷ s, and 1.64 × 10⁻⁴ cm, respectively. D_n, τ_n, and L_n were discovered to be 1.38 cm²/s, 4.13 × 10⁻¹¹ s, and 7.549 × 10⁻⁶ cm for electrons, respectively. These findings provide us with a complete and clear image of the most important physical parameters for industrial applications, particularly in the field of energy conversion.