Interface Stability via Dangling Bonds Termination in Graphene-Silicon Schottky Junction Solar Cells: a Critical Review
摘要
Due to economic challenges and climate change driven by global warming, renewable energy is being reviewed more frequently. One of the most significant renewable energy sources in the field of energy-producing technologies is usually thought to be solar cells. The distinct chemical and physical characteristics of graphene-silicon (Gr-Si) Schottky junction solar cells have generated considerable interest. Graphene is an ideal electrode material for various optoelectronic devices, including photodetectors, solar cells, and LEDs, due to its atomic thickness, enhanced carrier mobility, and transparency. Gr-Si Schottky junction solar cells have garnered increasing attention in recent years, and their power conversion efficiency has surpassed 18% at an astounding rate. In this study, we provide a brief overview of the mechanism, physical characteristics, and common fabrication methods of Gr-Si solar cells before summarizing a variety of important tactics to raise the cells' performance. To minimize the recombination and enhance the efficiency of Gr-Si Schottky junction solar cells, we pay particular attention to the dangling bonds present at the surface that affect the overall performance of the Gr-Si solar cells. Lastly, a detailed discussion of the difficulties and potential of Gr-Si solar cells is provided in the development of the devices.
Graphical Abstract