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<p>A two-dimensional transient numerical simulation was performed to investigate the influence of a silicon nitride (Si₃N₄)-coated magnesium oxide (MgO) crucible on the directional solidification (DS) process for growing multi-crystalline silicon (mc-Si) ingots. The study focused on evaluating the effect of the modified crucible configuration on impurity incorporation and thermal behaviour within the ingot. Impurities such as carbon, oxygen, and silicon carbide were analysed in the solidified mc-Si ingot and compared with those obtained from a conventional system utilising a silicon nitride-coated quartz (SiO₂) crucible. The simulation results revealed a noticeable reduction in the concentration of these impurities in the mc-Si ingot when grown using the silicon nitride-coated MgO crucible, attributed to the improved chemical stability and reduced reactivity of MgO at high temperatures. Additionally, the MgO crucible significantly altered the thermal field of the DS furnace. This modification led to a reduction in temperature gradient, which plays a crucial role in determining the thermal stress of the grown mc-Si ingot. Overall, the simulation findings suggest that incorporating a silicon nitride-coated MgO crucible in the DS process enhances ingot quality. These advantages make it a promising alternative to conventional quartz crucibles, offering a pathway toward producing higher-quality mc-Si ingots with reduced impurity levels, thereby meeting the stringent requirements of advanced photovoltaic applications.</p>

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Thermal and Impurity Behaviour in Multi-Crystalline Silicon Growth Using Si₃N₄-Coated MgO Crucibles: A Numerical Approach

  • 期刊论文

  • 发表日期：

    2026年7月9日

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  • P. Periyannan,
  • P. Karuppasamy,
  • P. Ramasamy

摘要

A two-dimensional transient numerical simulation was performed to investigate the influence of a silicon nitride (Si₃N₄)-coated magnesium oxide (MgO) crucible on the directional solidification (DS) process for growing multi-crystalline silicon (mc-Si) ingots. The study focused on evaluating the effect of the modified crucible configuration on impurity incorporation and thermal behaviour within the ingot. Impurities such as carbon, oxygen, and silicon carbide were analysed in the solidified mc-Si ingot and compared with those obtained from a conventional system utilising a silicon nitride-coated quartz (SiO₂) crucible. The simulation results revealed a noticeable reduction in the concentration of these impurities in the mc-Si ingot when grown using the silicon nitride-coated MgO crucible, attributed to the improved chemical stability and reduced reactivity of MgO at high temperatures. Additionally, the MgO crucible significantly altered the thermal field of the DS furnace. This modification led to a reduction in temperature gradient, which plays a crucial role in determining the thermal stress of the grown mc-Si ingot. Overall, the simulation findings suggest that incorporating a silicon nitride-coated MgO crucible in the DS process enhances ingot quality. These advantages make it a promising alternative to conventional quartz crucibles, offering a pathway toward producing higher-quality mc-Si ingots with reduced impurity levels, thereby meeting the stringent requirements of advanced photovoltaic applications.