Comparative Study of Novel 2D Materials-Based MEMS Piezoresistive Pressure Sensor
摘要
This work presents a simulation-based comparison of MEMS piezoresistive pressure sensors using Boron-Doped Graphene (BDG), MXene, Single Crystal Silicon, and Polycrystalline Silicon. The sensors were analyzed for pressure ranges from 0 to 100 kPa and diaphragm thicknesses between 20 µm and 40 µm. Under 100 kPa, Boron-Doped Graphene showed the highest von Mises stress of 432 MPa, while MXene, Single Crystal Si, and Poly-Si recorded 233 MPa, 109 MPa, and 103 MPa, respectively. Electric potential distribution reached up to 2.96 V for all materials, but with higher localization in Boron-Doped Graphene. Output voltage at 100 kPa was approximately 540 mV (Graphene), 690 mV (MXene), 1.505 V (Single Si), and 1.530 V (Poly-Si). A uniform flat-diaphragm structure without any stress concentrators was used to ensure reliable sensitivity evaluation at normal room temperature with nonlinearity of 0.18% FS. Boron-Doped Graphene (38.9 mV/V/bar) and MXene (10.54 mV/V/bar) show notably higher sensitivity and flexibility than silicon-based materials (0.72–4.09 mV/V/bar), enabling next-generation high-performance MEMS sensors. Normalized sensitivity and stress trends confirm Boron-Doped Graphene as a strong candidate for high-performance pressure sensing in MEMS applications. BDG and MXene-based sensors offer high precision in detecting small pressure changes, low power operation, and excellent stability under strain, making them well-suited for biomedical, wearable, and flexible electronic applications.