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<p>In this work, a novel Mg₂Si source-based double-gate vertical TFET (DG-VTFET) is proposed, where magnesium silicide (Mg₂Si)—a low bandgap material—is employed as a source material engineering (SME) approach to replace the conventional silicon source in a silicon-based vertical TFET. Using a silicide with a reduced bandgap, along with the conduction band discontinuities with silicon formed at the heterointerface, enhances band-to-band tunneling and improves carrier transport. The impact of temperature variation on electrical characteristics is also investigated to assess reliability over a wide operating range from 200 to 600&#xa0;K. Furthermore, a dielectric-modulated biosensor architecture is explored by immobilizing biomolecules inside a sensing cavity and varying the dielectric constant (k) from 1 to 12 for cavity thicknesses of 2&#xa0;nm, 3&#xa0;nm, and 4&#xa0;nm, confirming clear sensitivity trends with respect to permittivity and cavity geometry. For the proposed device, the extracted ON-current (I<sub>ON</sub>), OFF-current (I<sub>OFF</sub>), and subthreshold swing are 9.488 × 10⁻<sup>5</sup> A/µm, 2.265 × 10⁻<sup>14</sup> A/µm, and 33.6&#xa0;mV/dec, respectively, indicating significant improvement in current conduction and switching steepness primarily due to an increased tunneling rate and stronger electrostatic control ideal for low-power biosensing applications.</p>

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Design and Analysis of Mg2Si Source Based Vertical Quantum Tunneling Transistor to Enhance DC Switching Performance and its Application as Biosensors

  • 期刊论文

  • 发表日期：

    2026年4月30日

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  • Maryam Raza,
  • Imran Ahmed Khan,
  • M. Nizamuddin,
  • Aadil Anam

摘要

In this work, a novel Mg₂Si source-based double-gate vertical TFET (DG-VTFET) is proposed, where magnesium silicide (Mg₂Si)—a low bandgap material—is employed as a source material engineering (SME) approach to replace the conventional silicon source in a silicon-based vertical TFET. Using a silicide with a reduced bandgap, along with the conduction band discontinuities with silicon formed at the heterointerface, enhances band-to-band tunneling and improves carrier transport. The impact of temperature variation on electrical characteristics is also investigated to assess reliability over a wide operating range from 200 to 600 K. Furthermore, a dielectric-modulated biosensor architecture is explored by immobilizing biomolecules inside a sensing cavity and varying the dielectric constant (k) from 1 to 12 for cavity thicknesses of 2 nm, 3 nm, and 4 nm, confirming clear sensitivity trends with respect to permittivity and cavity geometry. For the proposed device, the extracted ON-current (ION), OFF-current (IOFF), and subthreshold swing are 9.488 × 10⁻5 A/µm, 2.265 × 10⁻14 A/µm, and 33.6 mV/dec, respectively, indicating significant improvement in current conduction and switching steepness primarily due to an increased tunneling rate and stronger electrostatic control ideal for low-power biosensing applications.