Scholarlink

<p>With the rapid advancement of wireless communication, the demand for higher data rates and wider bandwidth continues to grow. While GNSS systems require stable, low-noise performance, emerging 6G technologies in the upper mmWave and terahertz bands pose challenges to traditional junctionless transistors due to carrier transport limitations at high frequencies. This paper introduces a CMOS-compatible, high-linearity, and thermally robust low-noise amplifier (LNA) based on a double-gate junctionless FET (DG-JLFET) with T-shaped drain doping (TSDD). The optimized drain doping profile enhances electron mobility, minimizes impurity scattering, and ensures superior linearity across a broad thermal range (-25°C to 125°C). The device operates at an optimal bias point where the Zero-Temperature Coefficient (ZTC) and Zero-Crossing Point (ZCP) align near peak transconductance (g<sub>mmax</sub>), reducing distortion and maximizing efficiency. Two LNAs, designed for L-band (1–2 GHz) and V/W-band (60–110 GHz), exhibit high gain stability, ultra-low noise figures (NF = 0.09 dB and 1.3 dB), and excellent impedance matching at 1.5 GHz and 85 GHz (S<sub>21</sub> = 25.5 dB and 24.1 dB, respectively). This study advances silicon-based JLFET technology for RF applications, providing a scalable and cost-effective alternative to III-V technologies for next-generation GNSS and 6G systems.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

High-Linearity, Temperature-Stable, Low-Noise CMOS-Compatible T-Shaped Drain Doping JLFET: Optimized LNA Designs for GNSS, 6G, and Multi-Band Applications from L-Band to V/W-Bands

  • 期刊论文

  • 发表日期：

    2026年2月7日

查看全文
  • Reyhaneh Ejlali,
  • Saeed Haji-Nasiri,
  • Mahdi Vadizadeh,
  • Alireza Kashaniniya,
  • Arash Dana

摘要

With the rapid advancement of wireless communication, the demand for higher data rates and wider bandwidth continues to grow. While GNSS systems require stable, low-noise performance, emerging 6G technologies in the upper mmWave and terahertz bands pose challenges to traditional junctionless transistors due to carrier transport limitations at high frequencies. This paper introduces a CMOS-compatible, high-linearity, and thermally robust low-noise amplifier (LNA) based on a double-gate junctionless FET (DG-JLFET) with T-shaped drain doping (TSDD). The optimized drain doping profile enhances electron mobility, minimizes impurity scattering, and ensures superior linearity across a broad thermal range (-25°C to 125°C). The device operates at an optimal bias point where the Zero-Temperature Coefficient (ZTC) and Zero-Crossing Point (ZCP) align near peak transconductance (gmmax), reducing distortion and maximizing efficiency. Two LNAs, designed for L-band (1–2 GHz) and V/W-band (60–110 GHz), exhibit high gain stability, ultra-low noise figures (NF = 0.09 dB and 1.3 dB), and excellent impedance matching at 1.5 GHz and 85 GHz (S21 = 25.5 dB and 24.1 dB, respectively). This study advances silicon-based JLFET technology for RF applications, providing a scalable and cost-effective alternative to III-V technologies for next-generation GNSS and 6G systems.