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<p>An analytical model for a Nanoscale Tri-Material Tri-Gate MgZnO/ZnO High Electron Mobility Transistor (NS-TM-TG-MZO HEMT) is developed to investigate the channel potential, threshold voltage, and electric field distribution. A stepwise channel potential profile forms by incorporating three gate materials with different work functions, effectively suppressing short-channel effects (SCEs) and enhancing carrier transport efficiency. The model considers spontaneous and piezoelectric polarisation-induced charges at the MgZnO/ZnO interface, as well as the impact of trapped charges formed during device fabrication. The Poisson equation is solved using the finite difference method (FDM), which discretizes the governing equations to achieve a numerically stable and accurate solution for potential distribution. The proposed TMG structure demonstrates a 25 to 30% increase in drain current, a 20% decrease in peak electric field, and a 12% enhancement in transconductance (gₘ) relative to traditional single-material gate HEMTs. The variation in threshold voltage is maintained below 50&#xa0;mV, demonstrating significant resistance to short-channel degradation. The analytical results are confirmed using TCAD simulations, exhibiting an RMS deviation of less than 3% for surface potential and electric field profiles. The analytical results are validated through numerical simulations, demonstrating the superior performance of the TMG MgZnO/ZnO HEMT over conventional structures in terms of reduced SCEs, improved carrier confinement, and enhanced drain current characteristics.</p>

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Analytical Modeling and Performance Evaluation of Nanoscale Tri-Material Tri-Gate MgZnO/ZnO HEMTs on Silicon Substrate for Enhanced Short-Channel Suppression and Carrier Transport

  • 期刊论文

  • 发表日期：

    2026年1月31日

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  • K. Vinothkumar

摘要

An analytical model for a Nanoscale Tri-Material Tri-Gate MgZnO/ZnO High Electron Mobility Transistor (NS-TM-TG-MZO HEMT) is developed to investigate the channel potential, threshold voltage, and electric field distribution. A stepwise channel potential profile forms by incorporating three gate materials with different work functions, effectively suppressing short-channel effects (SCEs) and enhancing carrier transport efficiency. The model considers spontaneous and piezoelectric polarisation-induced charges at the MgZnO/ZnO interface, as well as the impact of trapped charges formed during device fabrication. The Poisson equation is solved using the finite difference method (FDM), which discretizes the governing equations to achieve a numerically stable and accurate solution for potential distribution. The proposed TMG structure demonstrates a 25 to 30% increase in drain current, a 20% decrease in peak electric field, and a 12% enhancement in transconductance (gₘ) relative to traditional single-material gate HEMTs. The variation in threshold voltage is maintained below 50 mV, demonstrating significant resistance to short-channel degradation. The analytical results are confirmed using TCAD simulations, exhibiting an RMS deviation of less than 3% for surface potential and electric field profiles. The analytical results are validated through numerical simulations, demonstrating the superior performance of the TMG MgZnO/ZnO HEMT over conventional structures in terms of reduced SCEs, improved carrier confinement, and enhanced drain current characteristics.