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<p>In this study, ZnO and carbon doped ZnO (C:ZnO) thin films were deposited on Silicon (Si) substrates and their potential application in silicon-based photovoltaic devices was investigated. Optical measurements revealed that carbon incorporation leads to a slight reduction of the optical band gap from 3.25 to 3.15 eV. The reflectivity decreased from 33 to 8%, and the absorption in the visible range was enhanced from 32 to 73%, favoring better light harvesting. Photoluminescence analysis showed a significant suppression of defect-related emissions in C:ZnO, confirming a lower density of non-radiative recombination centers. Transient photocurrent measurements indicated enhanced photoresponses in C:ZnO compared with pristine ZnO, which is consistent with its improved optical properties. Furthermore, photoconductance lifetime investigation revealed an important enhancement, with values increasing from 1.5 μs for bare Si to 49 μs for C:ZnO/Si, highlighting its excellent surface passivation and interface quality. These results demonstrate that the incorporation of carbon into ZnO improves both optical and electronic properties, These findings suggest that C:ZnO is a promising candidate for integration as an antireflection coating and passivating contact layer in high-performance Si solar cells.</p>

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Improving Silicon Surface Performance Using Spin-Coated Carbon-Doped ZnO Nanolayers

  • 期刊论文

  • 发表日期：

    2026年1月30日

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  • Moez Salem,
  • Noura khemiri,
  • Amel Haouas,
  • Ramzi Dhahri,
  • Elkenany Brens Elkenany,
  • Abdullah Almohammedi

摘要

In this study, ZnO and carbon doped ZnO (C:ZnO) thin films were deposited on Silicon (Si) substrates and their potential application in silicon-based photovoltaic devices was investigated. Optical measurements revealed that carbon incorporation leads to a slight reduction of the optical band gap from 3.25 to 3.15 eV. The reflectivity decreased from 33 to 8%, and the absorption in the visible range was enhanced from 32 to 73%, favoring better light harvesting. Photoluminescence analysis showed a significant suppression of defect-related emissions in C:ZnO, confirming a lower density of non-radiative recombination centers. Transient photocurrent measurements indicated enhanced photoresponses in C:ZnO compared with pristine ZnO, which is consistent with its improved optical properties. Furthermore, photoconductance lifetime investigation revealed an important enhancement, with values increasing from 1.5 μs for bare Si to 49 μs for C:ZnO/Si, highlighting its excellent surface passivation and interface quality. These results demonstrate that the incorporation of carbon into ZnO improves both optical and electronic properties, These findings suggest that C:ZnO is a promising candidate for integration as an antireflection coating and passivating contact layer in high-performance Si solar cells.