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<p>In this paper, the architectures of Nanosheet Field-Effect Transistor (NSFET) and Fin Field-Effect Transistor (FinFET) for biosensing applications are thoroughly compared. The study assesses their biosensing effectiveness and electrical performance of both devices. Both FinFET- and NSFET-based biosensor transfer characteristics (I<sub>D</sub>-V<sub>GS</sub>) are examined for situations containing charged and neutral biomolecules. The gate-all-around (GAA) design of NSFETs results in a greater I<sub>on</sub>/I<sub>off</sub> ratio, ensuring better electrostatic control and less leakage current. The higher vertical fin structure of FinFETs, on the other hand, provides a greater gate-facing surface area and stronger field penetration into the sensing region, which is responsible for their increased sensitivity. Better dielectric modulation and increased interaction with target proteins are made possible by this shape, which leads to more noticeable current changes and enhanced detection power. To further improve sensitivity, spacer engineering with high-k designs is investigated. For performance adjustment, structural modifications like cavity thickness and length are assessed. In order to create realistic biosensing applications the effects of partially filled nanocavities are also investigated. This study examines several important parameters, such as sensitivity, I<sub>on</sub>/I<sub>off</sub> ratio, transconductance, specificity, limit of detection (LOD), and time response.</p>

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Comparative Analysis of FinFET and NSFET Architectures for Label-Free Biosensing Applications

  • 期刊论文

  • 发表日期：

    2026年1月12日

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  • U. Gowthami,
  • Talla Srinivasa Rao,
  • Subhashini Tata,
  • K. Srilakshmi,
  • M. Durga Prakash

摘要

In this paper, the architectures of Nanosheet Field-Effect Transistor (NSFET) and Fin Field-Effect Transistor (FinFET) for biosensing applications are thoroughly compared. The study assesses their biosensing effectiveness and electrical performance of both devices. Both FinFET- and NSFET-based biosensor transfer characteristics (ID-VGS) are examined for situations containing charged and neutral biomolecules. The gate-all-around (GAA) design of NSFETs results in a greater Ion/Ioff ratio, ensuring better electrostatic control and less leakage current. The higher vertical fin structure of FinFETs, on the other hand, provides a greater gate-facing surface area and stronger field penetration into the sensing region, which is responsible for their increased sensitivity. Better dielectric modulation and increased interaction with target proteins are made possible by this shape, which leads to more noticeable current changes and enhanced detection power. To further improve sensitivity, spacer engineering with high-k designs is investigated. For performance adjustment, structural modifications like cavity thickness and length are assessed. In order to create realistic biosensing applications the effects of partially filled nanocavities are also investigated. This study examines several important parameters, such as sensitivity, Ion/Ioff ratio, transconductance, specificity, limit of detection (LOD), and time response.