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<p>The Tunnel Oxide Passivated Contact (TOPCon) solar cell represents an advanced iteration of the first-generation PERT solar cell, renowned for its high power conversion efficiency. Performance of the TOPCon solar cells relies on characteristics of the dielectric material from which the tunneling occurs. In this study, performance of the Tunnel Oxide Passivated Contact (TOPCon) solar cells and the impact of various transparent conducting oxides and tunnelling oxide layers on them were simulated. The study involved a detailed analysis of key parameters, such as the use of TCOs (FTO, AZO, ZnO, ITO) as a passivation layer and optically transparent electrodes, in combination with different alternative tunnelling oxide dielectric layers (SiO<sub>2</sub>, Al<sub>2</sub>O<sub>3</sub>, HfO<sub>2</sub>, ZrO<sub>2</sub>, and TiO<sub>2</sub>) by using the AFORS-HET simulation software. The results showed that the recombination at the interface plays no role anymore for an ultra-thin oxide layer with the interface states density and pinhole density below 1 × 10<sup>9</sup>&#xa0;cm<sup>−2</sup>&#xa0;eV<sup>−1</sup> and 1 × 10<sup>–6</sup>, respectively. The optimum solar cell performance values were found to be V<sub>oc</sub> = 683&#xa0;mV, J<sub>sc</sub> = 42.71&#xa0;mA/cm<sup>2</sup>, FF = 88.39%, and power conversion efficiency (PCE) = 26.16% with an Al<sub>2</sub>O<sub>3</sub> tunnel dielectric layer.</p>

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Investigating the influence of TCOs and tunneling dielectric layers on TOPCon solar cell performance

  • 期刊论文

  • 发表日期：

    2026年2月23日

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  • Sofia Tahir,
  • Rabia Saeed,
  • Shammas Mushtaq,
  • Yasin Khan,
  • Javed Iqbal,
  • Effat Yasin,
  • Qurat ul Ain Asif,
  • Kiran Mehmood

摘要

The Tunnel Oxide Passivated Contact (TOPCon) solar cell represents an advanced iteration of the first-generation PERT solar cell, renowned for its high power conversion efficiency. Performance of the TOPCon solar cells relies on characteristics of the dielectric material from which the tunneling occurs. In this study, performance of the Tunnel Oxide Passivated Contact (TOPCon) solar cells and the impact of various transparent conducting oxides and tunnelling oxide layers on them were simulated. The study involved a detailed analysis of key parameters, such as the use of TCOs (FTO, AZO, ZnO, ITO) as a passivation layer and optically transparent electrodes, in combination with different alternative tunnelling oxide dielectric layers (SiO2, Al2O3, HfO2, ZrO2, and TiO2) by using the AFORS-HET simulation software. The results showed that the recombination at the interface plays no role anymore for an ultra-thin oxide layer with the interface states density and pinhole density below 1 × 109 cm−2 eV−1 and 1 × 10–6, respectively. The optimum solar cell performance values were found to be Voc = 683 mV, Jsc = 42.71 mA/cm2, FF = 88.39%, and power conversion efficiency (PCE) = 26.16% with an Al2O3 tunnel dielectric layer.