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<p>In this work, for the first time a dopingless MOSFETs (Dl-MOSFETs) cryogenic transfer characteristics has been utilized to design a leaky integrate and fire (LIF) neuron with considerable enhancement in area, energy and cost. This works validates that Dl-MOSFET based LIF neuron can accurately simulate the behavior of a biological neuron without the need for additional circuitry through 2D calibrated simulation. The proposed LIF neuron shows significantly lower energy per spike of ~ 450 aJ/spike, at cryogenic conditions. Besides this 95.2% recognition precision for the Modified National Institute of Standards and Technology (MNIST) picture has been achieved. In addition, Dl-MOSFET can be processed at a minimal thermal budget since it doesn't require any doped regions.</p>

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Low Temperature Operation of Dopingless MOSFETs for Efficient LIF Neuron Implementation

  • 期刊论文

  • 发表日期：

    2026年1月15日

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  • Faisal Bashir

摘要

In this work, for the first time a dopingless MOSFETs (Dl-MOSFETs) cryogenic transfer characteristics has been utilized to design a leaky integrate and fire (LIF) neuron with considerable enhancement in area, energy and cost. This works validates that Dl-MOSFET based LIF neuron can accurately simulate the behavior of a biological neuron without the need for additional circuitry through 2D calibrated simulation. The proposed LIF neuron shows significantly lower energy per spike of ~ 450 aJ/spike, at cryogenic conditions. Besides this 95.2% recognition precision for the Modified National Institute of Standards and Technology (MNIST) picture has been achieved. In addition, Dl-MOSFET can be processed at a minimal thermal budget since it doesn't require any doped regions.