Scholarlink

<p>In this study, we explore the potential of utilizing silicon (Si) as the absorber layer and tin disulfide (SnS<sub>2</sub>) as the window layer as well as electron transport layer (ETL) in a heterojunction solar cell design. Silicon is an abundant, low-cost, and efficient light absorber, while SnS<sub>2</sub> is a n-type semiconductor with a wide bandgap, high optical transparency and compact uniform surface. The proposed device structure ‘Al/SnS<sub>2</sub>/p-Si/Au’ was numerically modelled using SCAPS-1D simulation tool under standard illumination conditions (100 mW/cm<sup>2</sup> and 298&#xa0;K) with ideal resistances. The effect of key parameters such as layer thickness (t), doping densities (N<sub>d</sub> and N<sub>a</sub>), Auger hole capture coefficient (Cp), electron affinity (χ), interface defect density (D<sub>it</sub>), metal work function (Φ<sub>m</sub>) was systematically analysed on the device performance. The electrical characteristics (J-V, EQE, C-V) were simulated to evaluate the junction behaviour and device performance. The optimized parameters for achieving the best performance are: t<sub>p-Si</sub>—200&#xa0;µm, t<sub>SnS2</sub>—100&#xa0;nm, N<sub>a</sub>—1.0 × 10<sup>18</sup>&#xa0;cm<sup>−3</sup>, N<sub>d</sub>—1.0 × 10<sup>17</sup>&#xa0;cm<sup>−3</sup>, C<sub>p</sub> (p-Si)—1.0 × 10<sup>–31</sup> cm<sup>6</sup>/s, χ<sub>SnS2</sub>—4.24&#xa0;eV, D<sub>it</sub> (SnS<sub>2</sub>/p-Si)—1.0 × 10<sup>10</sup>&#xa0;cm<sup>−2</sup> and Φ<sub>m</sub> (top metal’s contact)—4.2&#xa0;eV for aluminium. The optimized device design ‘Al/SnS<sub>2</sub>/p-Si/Au’ can achieve power conversion efficiency (PCE) up to 18.22% corresponding to open circuit voltage (V<sub>oc</sub>) of 682&#xa0;mV, short circuit current density (J<sub>sc</sub>) of 31.72&#xa0;mA/cm<sup>2</sup> and fill factor (FF) of 84.10%. The C-V analysis yielded built-in potential (V<sub>bi</sub>): 1.08&#xa0;V, acceptor density (N<sub>a</sub>): 0.83 × 10<sup>18</sup>&#xa0;cm<sup>−3</sup> and depletion layer width (W): 41.10&#xa0;nm. These findings indicate the potential of the ‘Al/SnS<sub>2</sub>/p-Si/Au’ heterojunction design for high-performance solar cells.</p> Graphical Abstract <p></p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Novel, All Inorganic SnS2/p-Silicon Heterojunction Based Solar Cells with High Performance: A Numerical Analysis via SCAPS-1D

  • 期刊论文

  • 发表日期：

    2026年1月13日

查看全文
  • Riya Bansal,
  • Diksha,
  • Prathap Pathi,
  • Sanjay K. Srivastava

摘要

In this study, we explore the potential of utilizing silicon (Si) as the absorber layer and tin disulfide (SnS2) as the window layer as well as electron transport layer (ETL) in a heterojunction solar cell design. Silicon is an abundant, low-cost, and efficient light absorber, while SnS2 is a n-type semiconductor with a wide bandgap, high optical transparency and compact uniform surface. The proposed device structure ‘Al/SnS2/p-Si/Au’ was numerically modelled using SCAPS-1D simulation tool under standard illumination conditions (100 mW/cm2 and 298 K) with ideal resistances. The effect of key parameters such as layer thickness (t), doping densities (Nd and Na), Auger hole capture coefficient (Cp), electron affinity (χ), interface defect density (Dit), metal work function (Φm) was systematically analysed on the device performance. The electrical characteristics (J-V, EQE, C-V) were simulated to evaluate the junction behaviour and device performance. The optimized parameters for achieving the best performance are: tp-Si—200 µm, tSnS2—100 nm, Na—1.0 × 1018 cm−3, Nd—1.0 × 1017 cm−3, Cp (p-Si)—1.0 × 10–31 cm6/s, χSnS2—4.24 eV, Dit (SnS2/p-Si)—1.0 × 1010 cm−2 and Φm (top metal’s contact)—4.2 eV for aluminium. The optimized device design ‘Al/SnS2/p-Si/Au’ can achieve power conversion efficiency (PCE) up to 18.22% corresponding to open circuit voltage (Voc) of 682 mV, short circuit current density (Jsc) of 31.72 mA/cm2 and fill factor (FF) of 84.10%. The C-V analysis yielded built-in potential (Vbi): 1.08 V, acceptor density (Na): 0.83 × 1018 cm−3 and depletion layer width (W): 41.10 nm. These findings indicate the potential of the ‘Al/SnS2/p-Si/Au’ heterojunction design for high-performance solar cells.

Graphical Abstract