<p>This study presents a comprehensive numerical optimization of monocrystalline silicon solar cells using the PC1D simulation framework. The investigation systematically evaluates the effects of base resistivity, emitter and back-surface field (BSF) doping concentrations, and bulk carrier lifetime on device performance under standard AM1.5G illumination (0.1 W·cm⁻², 25&#xa0;°C). Parametric sweeps across base resistivities ranging from 0.01 Ω·cm to 20 Ω·cm and doping concentrations between 1 × 10¹⁵&#xa0;cm⁻³ and 1 × 10²²&#xa0;cm⁻³ were conducted to determine the optimal operating conditions. The results reveal that a moderate base resistivity of approximately 0.5 Ω·cm, combined with emitter doping between 1 × 10¹⁸&#xa0;cm⁻³ and 1 × 10¹⁹&#xa0;cm⁻³ and a BSF doping concentration near 1 × 10¹⁸&#xa0;cm⁻³, provides the best balance between carrier collection and recombination suppression. The optimized configuration achieves an efficiency of 20.43%, with Voc = 704.6&#xa0;mV, Jsc = 38.87&#xa0;mA·cm⁻², and FF = 78.84%. Excessive doping intensifies Auger recombination, while insufficient doping weakens the built-in electric field. The simulated results exhibit close agreement with experimental data, showing deviations below 8%, thus validating the predictive capability of the PC1D model. This study establishes a physically grounded and experimentally reproducible framework for optimizing high-efficiency crystalline silicon solar cells.</p>