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<p>Thin films of hydrogenated amorphous silicon nitride (a-SiNₓ:H) were deposited by DC magnetron sputtering from a pure silicon target in an Ar/N<sub>2</sub>/H<sub>2</sub> plasma without intentional substrate heating. The aim was to assess the feasibility of synthesizing quasi-stoichiometric silicon nitride with good optical quality at near-room-temperature conditions. Given that hydrogen tends to be readily incorporated into the material at low temperatures, the influence of hydrogen flow rate on the structural and optical properties of the films was investigated. The chemical bonding configurations and hydrogen incorporation were analyzed using Fourier-transform infrared spectroscopy (FTIR), while spectroscopic ellipsometry was employed to determine the film thickness, refractive index, and optical band gap. A linear increase in substrate temperature was observed during deposition, with the heating rate increasing as the hydrogen flow rate decreased. The results demonstrate that quasi-stoichiometric a-Si<sub>3</sub>N<sub>4</sub>:H films with a wide optical band gap (~ 4.2&#xa0;eV), low oxygen content, and tunable refractive index can be achieved under these deposition conditions. These findings confirm the viability of synthesizing high-quality a-Si<sub>3</sub>N<sub>4</sub>:H thin films via low-temperature DC magnetron sputtering.</p>

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Study of Hydrogenated Amorphous Silicon Nitride Deposition by DC Magnetron Sputtering without Intentional Substrate Heating

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Kamel Mokeddem,
  • Boudjemaa Bouaouina,
  • Mohamed Kechouane

摘要

Thin films of hydrogenated amorphous silicon nitride (a-SiNₓ:H) were deposited by DC magnetron sputtering from a pure silicon target in an Ar/N2/H2 plasma without intentional substrate heating. The aim was to assess the feasibility of synthesizing quasi-stoichiometric silicon nitride with good optical quality at near-room-temperature conditions. Given that hydrogen tends to be readily incorporated into the material at low temperatures, the influence of hydrogen flow rate on the structural and optical properties of the films was investigated. The chemical bonding configurations and hydrogen incorporation were analyzed using Fourier-transform infrared spectroscopy (FTIR), while spectroscopic ellipsometry was employed to determine the film thickness, refractive index, and optical band gap. A linear increase in substrate temperature was observed during deposition, with the heating rate increasing as the hydrogen flow rate decreased. The results demonstrate that quasi-stoichiometric a-Si3N4:H films with a wide optical band gap (~ 4.2 eV), low oxygen content, and tunable refractive index can be achieved under these deposition conditions. These findings confirm the viability of synthesizing high-quality a-Si3N4:H thin films via low-temperature DC magnetron sputtering.