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<p>This work proposes a novel III-V heterojunction Source-All-Around Vertical TFET (SS-VTFET) optimized for ultra-low-power and high-speed nanoelectronics. The design incorporates a surrounding-source geometry, heavily doped source pocket, low-bandgap GaSb/InSb heterojunction, and high-mobility InSb channel to enhance band-to-band tunneling (BTBT). Simulations predict an impressive on-current (2.17 × 10⁻<sup>4</sup> A/μm), ultra-low off-current (2.13 × 10⁻<sup>1</sup>⁷ A/μm), high I<sub>ON</sub>/I<sub>OFF</sub> ratio (~ 10<sup>13</sup>), steep subthreshold slope (7.23&#xa0;mV/dec), strong transconductance (5.2 × 10⁻<sup>4</sup> S), and a high cut-off frequency (0.19 THz). Reliability analysis under interface trap charges (ITCs) and temperature variations is performed, along with detailed noise characterization, including diffusion, flicker, and generation-recombination (GR) noise. Results confirm the SS-VTFET's strong potential for next-generation low-power, high-speed electronic applications.</p>

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Reliability-Oriented Design of Source-All-Around Vertical TFETs: Mitigation Strategies for Noise, Interface Traps, and Thermal Instability

  • 期刊论文

  • 发表日期：

    2026年1月7日

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  • Potharaju Ramesh,
  • Sirisha Meriga,
  • Bijit Choudhuri

摘要

This work proposes a novel III-V heterojunction Source-All-Around Vertical TFET (SS-VTFET) optimized for ultra-low-power and high-speed nanoelectronics. The design incorporates a surrounding-source geometry, heavily doped source pocket, low-bandgap GaSb/InSb heterojunction, and high-mobility InSb channel to enhance band-to-band tunneling (BTBT). Simulations predict an impressive on-current (2.17 × 10⁻4 A/μm), ultra-low off-current (2.13 × 10⁻1⁷ A/μm), high ION/IOFF ratio (~ 1013), steep subthreshold slope (7.23 mV/dec), strong transconductance (5.2 × 10⁻4 S), and a high cut-off frequency (0.19 THz). Reliability analysis under interface trap charges (ITCs) and temperature variations is performed, along with detailed noise characterization, including diffusion, flicker, and generation-recombination (GR) noise. Results confirm the SS-VTFET's strong potential for next-generation low-power, high-speed electronic applications.