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<p>With the advancement of packaging technologies, wafer bonding has become increasingly critical in the fabrication of microelectronic devices, and stress concentration during this process has been recognized as a key factor affecting device reliability. To elucidate the stress response characteristics of wafers with different edge profiles and thicknesses during bonding, finite element simulations were conducted on R-type (rounded) and T-type (beveled) wafers with varying thinning thicknesses and chamfer angles. The simulations were performed under vertically applied uniform loads ranging from 15 to 60&#xa0;MPa. The results indicate that while the stress distribution remains relatively uniform across the central wafer region, pronounced stress concentrations emerge in the edge regions, particularly near geometric discontinuities such as notches. T-type edges showed relatively better stress mitigation performance when thinned to an intermediate thickness (~ 562&#xa0;μm), and larger chamfer angles were found to reduce stress concentrations associated with thinning. Further analysis of the stress concentration factor <i>K</i> revealed that R-type wafers exhibited a marked increase in <i>K</i> following thinning, whereas T-type structures demonstrated enhanced tolerance to thinning as chamfer angles increased. These findings indicate notable differences in stress adaptation between edge geometries under varying thicknesses and clarify the coupled influence of edge design and thinning on wafer stress behavior. The results may offer useful guidance for optimizing wafer edge structures to improve bonding performance and enhance the mechanical reliability of chip packages.</p>

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Finite Element Simulation of Bonding-Induced Stresses in Thinned Wafers with Varying Edge Geometries

  • 期刊论文

  • 发表日期：

    2025年12月4日

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  • Wuju Qin,,
  • Xu Zhang,
  • Xuefeng Han,
  • Yuan Liu,
  • Yingchao Zhou,
  • Zhongshi Lou,
  • Shuai Yuan,
  • Deren Yang

摘要

With the advancement of packaging technologies, wafer bonding has become increasingly critical in the fabrication of microelectronic devices, and stress concentration during this process has been recognized as a key factor affecting device reliability. To elucidate the stress response characteristics of wafers with different edge profiles and thicknesses during bonding, finite element simulations were conducted on R-type (rounded) and T-type (beveled) wafers with varying thinning thicknesses and chamfer angles. The simulations were performed under vertically applied uniform loads ranging from 15 to 60 MPa. The results indicate that while the stress distribution remains relatively uniform across the central wafer region, pronounced stress concentrations emerge in the edge regions, particularly near geometric discontinuities such as notches. T-type edges showed relatively better stress mitigation performance when thinned to an intermediate thickness (~ 562 μm), and larger chamfer angles were found to reduce stress concentrations associated with thinning. Further analysis of the stress concentration factor K revealed that R-type wafers exhibited a marked increase in K following thinning, whereas T-type structures demonstrated enhanced tolerance to thinning as chamfer angles increased. These findings indicate notable differences in stress adaptation between edge geometries under varying thicknesses and clarify the coupled influence of edge design and thinning on wafer stress behavior. The results may offer useful guidance for optimizing wafer edge structures to improve bonding performance and enhance the mechanical reliability of chip packages.