<p>Silicon carbide (SiC) power devices exhibit significant potential in ultra-high voltage (UHV) power electronics applications due to their ability to simplify circuit topology and enhance energy conversion efficiency. The increasing demand for higher breakdown voltages has led to greater termination lengths and more complex structures. Therefore, termination technology has become a critical challenge in UHV SiC power devices. This paper discusses three crucial issues involved in UHV SiC termination technology, namely avalanche model, analytical method, and structure configuration. First, a comparative analysis of avalanche breakdown models is performed to elucidate the physical characteristics of SiC impact ionization coefficients. The identified model parameters provide a theoretical basis for predicting the breakdown voltage of SiC termination. Furthermore, two innovative models are proposed to facilitate the efficient design of termination configuration and reduce the complexity of structure traversal calculation in UHV termination: a multi-ring iterative model based on voltage superposition and a sector depletion model based on charge balance. Finally, the technical features of state-of-the-art UHV SiC terminations are analyzed to gain insight into the electric field modulation principles of various structure configurations. The design considerations are also discussed with a focus on the feasibility of different termination categories in UHV devices.</p>