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<p>The current article goals to synthesize of silicon carbide(SiC)/silicon nitride(Si<sub>3</sub>N<sub>4</sub>) nanomaterials doped polyvinyl alcohol(PVA) as a promising nanocomposites films to employ in various optoelectronics fields. When compare with other films of nanocomposites, the PVA/SiC/Si<sub>3</sub>N<sub>4</sub> films have distinguished optical properties, inexpensive, superior physical and chemical properties make them suitable for many futuristic applications. The morphological, structural, and optical features of PVA/SiC/Si<sub>3</sub>N<sub>4</sub> films were examined. The morphological and structural features involved FTIR and optical microscope (OM). The results showed the absorbance of PVA/SiC/Si<sub>3</sub>N<sub>4</sub> films is high at (UV-S) Ultraviolet spectra. The PVA absorbance enhanced of 90% at λ = 320&#xa0;nm(UV-S) while its increase of 95.7% at λ = 800&#xa0;nm (NIR-S) when the SiC/Si<sub>3</sub>N<sub>4</sub> ratio reached of 3.9 wt.%. These results make the PVA/SiC/Si<sub>3</sub>N<sub>4</sub> films are important and promising for NIR sensing, UV blocking and other optoelectronics applications. The PVA energy gap reduced from 4.7&#xa0;eV to 2.8&#xa0;eV and from 4.2&#xa0;eV to 1.4&#xa0;eV when the SiC/Si<sub>3</sub>N<sub>4</sub> NPs content reached of 3.9 wt.% for allowed and forbidden transitions, and this performance made them welcomed in numerous optoelectronics and photonics approaches. The refractive index was increased from 2.05 to 2.6 at UV-spectra (λ = 200&#xa0;nm) with rising the SiC/Si<sub>3</sub>N<sub>4</sub> NPs content to 3.9 wt.%. The optical factors: absorption coefficient; extinction coefficient; real and imaginary dielectric constants of PVA were enhanced with increasing SiC/Si<sub>3</sub>N<sub>4</sub> NPs content; these results cause to made the PVA/SiC/Si<sub>3</sub>N<sub>4</sub> films are appropriate in optical applications. The PVA optical conductivity is improved about 94.3% at λ = 320&#xa0;nm while the SiC/Si<sub>3</sub>N<sub>4</sub> content reached of 3.9 wt.%. These values are appropriate for promising optical applications. Finally, the realized results established the PVA/SiC/Si<sub>3</sub>N<sub>4</sub> films can be useful for promising optoelectronics fields.</p>

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Manufacturing and Ameliorating the Features of Silicon Carbide-Silicon Nitride Futuristic Nanomaterials Doped Organic Polymer for Flexible Optoelectronics and Photonics Applications

  • 期刊论文

  • 发表日期：

    2025年12月2日

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  • Aseel Hadi,
  • Hamed Ibrahim,
  • Ahmed Hashim,
  • Najah M. L. Al Maimuri

摘要

The current article goals to synthesize of silicon carbide(SiC)/silicon nitride(Si3N4) nanomaterials doped polyvinyl alcohol(PVA) as a promising nanocomposites films to employ in various optoelectronics fields. When compare with other films of nanocomposites, the PVA/SiC/Si3N4 films have distinguished optical properties, inexpensive, superior physical and chemical properties make them suitable for many futuristic applications. The morphological, structural, and optical features of PVA/SiC/Si3N4 films were examined. The morphological and structural features involved FTIR and optical microscope (OM). The results showed the absorbance of PVA/SiC/Si3N4 films is high at (UV-S) Ultraviolet spectra. The PVA absorbance enhanced of 90% at λ = 320 nm(UV-S) while its increase of 95.7% at λ = 800 nm (NIR-S) when the SiC/Si3N4 ratio reached of 3.9 wt.%. These results make the PVA/SiC/Si3N4 films are important and promising for NIR sensing, UV blocking and other optoelectronics applications. The PVA energy gap reduced from 4.7 eV to 2.8 eV and from 4.2 eV to 1.4 eV when the SiC/Si3N4 NPs content reached of 3.9 wt.% for allowed and forbidden transitions, and this performance made them welcomed in numerous optoelectronics and photonics approaches. The refractive index was increased from 2.05 to 2.6 at UV-spectra (λ = 200 nm) with rising the SiC/Si3N4 NPs content to 3.9 wt.%. The optical factors: absorption coefficient; extinction coefficient; real and imaginary dielectric constants of PVA were enhanced with increasing SiC/Si3N4 NPs content; these results cause to made the PVA/SiC/Si3N4 films are appropriate in optical applications. The PVA optical conductivity is improved about 94.3% at λ = 320 nm while the SiC/Si3N4 content reached of 3.9 wt.%. These values are appropriate for promising optical applications. Finally, the realized results established the PVA/SiC/Si3N4 films can be useful for promising optoelectronics fields.