Fabrication and Characterisation of Zinc Oxide (ZnO) Grown on Porous Silicon (PSi) Substrate Using Different Techniques for Glucose Biosensor
摘要
This study investigates the structural and optical properties of zinc oxide (ZnO) thin films deposited on porous silicon (PSi) substrates using three different fabrication techniques: radio frequency (RF) sputtering, sol–gel spin coating, and thermal evaporation. Characterization was performed using X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and photoluminescence (PL) spectroscopy. All ZnO/PSi samples exhibited high-quality polycrystalline films with low defect densities. Among the methods used, the RF sputtering technique achieved the best electrochemical performance. The maximum current density (Jmax) and Michaelis–Menten constant (K_M) were found to be 570 μA and 680 μM (0.68 mM), respectively, demonstrating efficient enzyme immobilisation on the ZnO/PSi electrode surface and a strong affinity between the immobilised glucose (GOx) molecules and glucose molecules. Furthermore, the glucose biosensor demonstrated moderate sensitivity over the linear detection range (500 μM to 2000 μM), with a linear range slope (LRS) of 40 μA/cm2/μM, and a correlation coefficient (R2) of 0.9543.