<p>This article presents a detailed study of the admittance and dielectric characteristics of Al/MgO/p-Si device. The admittance (Y) measurements including both conductance (G) and capacitance (C) components of the device were performed in the frequency range of 5&#xa0;kHz-3&#xa0;MHz. Interface traps affecting the electrical properties of the device were determined from the measured C and G data at various frequencies using different methods such as the high-low frequency (C_HF-C_LF) capacitance and conductance. Furthermore, the dielectric parameters including ε', ε" and tanδ of the device were calculated using these measurement data. The high values ​​ of ε', ε" and tanδ were attributed to the presence of space charge polarization. The increase of ac conductivity (σ_ac) with frequency is related to the increased mobility of electric charge carriers. The experimental results indicate that the fabricated Al/MgO/p-Si structure exhibits characteristics suitable for application as an energy storage component in electronic systems.</p>