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<p>The position and state of the impurity atoms have long been understood as crucial in determining the properties of bulk and nanoscale semiconductors. Especially at nanoscale there is a need for additional characterization techniques and reliable data. To study the distribution of phosphorus in doped Si nanocrystals we took advantage of the unique surface passivation options of silicon, and for the first time employed a multi-step etching/oxidation investigation. The methods of study included XRD for crystallite size measurement, TXRF for chemical composition, and IR spectroscopy as a means to obtain the concentration and amount of free charge carriers. We have demonstrated the possibility to determine the mean size of nanocrystals from their plasmonic response through careful choice of a model and with the help of that we calculated the radial profiles of the electrically active phosphorus. The active impurity was found to segregate towards the center of the nanocrystals with a factor of 1.8 – 2.7 growth in concentration with respect to the subinterface layer. For the samples studied in this work the impurity distribution is essentially equilibrium, so the difference in concentrations may be translated to 60 – 100&#xa0;meV energy preference of the active phosphorus to deep core positions. We suggest the determined compressive strain of lattice of 0.5 – 0.6 GPa to be the principal driving force behind such energetics.</p>

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Depth Profiling of Phosphorus Impurity in Silicon Nanocrystals by X-ray Fluorescence and IR Region Localized Surface Plasmon Resonance

  • 期刊论文

  • 发表日期：

    2025年12月20日

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  • Sergei S. Bubenov,
  • Vadim M. Popelensky,
  • Alexander A. Vinokurov,
  • Ivan V. Chernoukhov,
  • Olesya I. Perminova,
  • Nikolay N. Kononov,
  • Tatyana A. Kuznetsova,
  • Sergey G. Dorofeev

摘要

The position and state of the impurity atoms have long been understood as crucial in determining the properties of bulk and nanoscale semiconductors. Especially at nanoscale there is a need for additional characterization techniques and reliable data. To study the distribution of phosphorus in doped Si nanocrystals we took advantage of the unique surface passivation options of silicon, and for the first time employed a multi-step etching/oxidation investigation. The methods of study included XRD for crystallite size measurement, TXRF for chemical composition, and IR spectroscopy as a means to obtain the concentration and amount of free charge carriers. We have demonstrated the possibility to determine the mean size of nanocrystals from their plasmonic response through careful choice of a model and with the help of that we calculated the radial profiles of the electrically active phosphorus. The active impurity was found to segregate towards the center of the nanocrystals with a factor of 1.8 – 2.7 growth in concentration with respect to the subinterface layer. For the samples studied in this work the impurity distribution is essentially equilibrium, so the difference in concentrations may be translated to 60 – 100 meV energy preference of the active phosphorus to deep core positions. We suggest the determined compressive strain of lattice of 0.5 – 0.6 GPa to be the principal driving force behind such energetics.