<p>This study presents a novel analytical and numerical framework for exploring the coupled photothermal, elastic, and plasma wave interactions in semiconductor materials under the GNII model, providing explicit solutions that capture the complex interplay of thermal, elastic, and carrier dynamics without energy dissipation. Specifically, the model addresses the interaction of thermo-elastic waves with plasma effects when subjected to high-intensity laser irradiation. The analytical solutions for these complex phenomena were derived using an eigenvalue approach combined with Laplace transform methods, providing explicit and precise formulations in transformed domains. Numerical inversion of these analytical solutions enabled detailed observation and analysis within the time domain. Comprehensive numerical computations were conducted using silicon-like semiconductor media to validate the model and explore the interplay among thermal, elastic, and plasma responses under varying laser intensities. The distribution of field quantities is significantly impacted by the photo-generated carrier lifetime and pulse rise time, which is a significant phenomenon, according to the graphical data.</p>