<p>A vertical dopingless silicon tunnel field-effect transistor (VDL-SiTFET) is proposed and evaluated as a high-performance resistance temperature detector (RTD). This work is motivated by the need for compact, high-sensitivity, low noise temperature sensor capable of operating over a wide temperature range. We conducted comprehensive device simulations over a wide temperature range (50–500 K) using gate voltages from 0.5 V to 1.5 V in 0.25 V increments. The device exhibits a strong negative temperature coefficient of resistance of -25.7 <InlineEquation ID="IEq1"> <EquationSource Format="TEX">$\times $</EquationSource> <EquationSource Format="MATHML"><math> <mo>×</mo> </math></EquationSource> </InlineEquation> 10<InlineEquation ID="IEq2"> <EquationSource Format="TEX">$^4$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mrow /> <mn>4</mn> </mmultiscripts> </math></EquationSource> </InlineEquation>/K, indicating a significant decrease in resistance with rising temperature. At a gate voltage of 0.5 V, the RTD response is highly linear (R<InlineEquation ID="IEq3"> <EquationSource Format="TEX">$^{\textbf {2}}$</EquationSource> <EquationSource Format="MATHML"><math> <mmultiscripts> <mrow /> <mrow /> <mn mathvariant="bold">2</mn> </mmultiscripts> </math></EquationSource> </InlineEquation> <InlineEquation ID="IEq4"> <EquationSource Format="TEX">$\varvec{\approx }$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mo mathvariant="bold">≈</mo> </mrow> </math></EquationSource> </InlineEquation> 0.974), and the sensitivity reaches a peak of -300.6 <InlineEquation ID="IEq5"> <EquationSource Format="TEX">$\varvec{\Omega }$</EquationSource> <EquationSource Format="MATHML"><math> <mrow> <mi mathvariant="bold">Ω</mi> </mrow> </math></EquationSource> </InlineEquation>/K. These results confirm the proposed VDL-SiTFET’s high sensitivity and linear accuracy as a temperature sensor. Furthermore, the impact of positive and negative interface trap charges (ITCs) on device reliability is examined. Simulations reveal that ITCs slightly alter the temperature-dependent ON-state resistance, highlighting their critical role in ensuring sensor reliability. Overall, the proposed VDL-SiTFET shows promise as a highly linear, sensitive RTD, with careful consideration of interface traps necessary to ensure reliable operation in practical devices.</p>

Design and Analysis of a Compact Vertical TFET for RTD-Based Temperature Sensing

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发表日期：

2025年10月29日

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Ankita Kushawaha,
Vibhash Choudhary,
Manoj Kumar

摘要

A vertical dopingless silicon tunnel field-effect transistor (VDL-SiTFET) is proposed and evaluated as a high-performance resistance temperature detector (RTD). This work is motivated by the need for compact, high-sensitivity, low noise temperature sensor capable of operating over a wide temperature range. We conducted comprehensive device simulations over a wide temperature range (50–500 K) using gate voltages from 0.5 V to 1.5 V in 0.25 V increments. The device exhibits a strong negative temperature coefficient of resistance of -25.7 $\times $ $\times$ 10 $^4$ $^{4}$ /K, indicating a significant decrease in resistance with rising temperature. At a gate voltage of 0.5 V, the RTD response is highly linear (R $^{\textbf {2}}$ $^{2}$ $\varvec{\approx }$ $\approx$ 0.974), and the sensitivity reaches a peak of -300.6 $\varvec{\Omega }$ $Ω$ /K. These results confirm the proposed VDL-SiTFET’s high sensitivity and linear accuracy as a temperature sensor. Furthermore, the impact of positive and negative interface trap charges (ITCs) on device reliability is examined. Simulations reveal that ITCs slightly alter the temperature-dependent ON-state resistance, highlighting their critical role in ensuring sensor reliability. Overall, the proposed VDL-SiTFET shows promise as a highly linear, sensitive RTD, with careful consideration of interface traps necessary to ensure reliable operation in practical devices.