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<p>This study examines the effect of acidic versus alkaline saw damage removal (SDR) processes on the silicon surface morphology, interface electronic properties, and performance of silicon heterojunction (SHJ) solar cells, without employing any additional additives during SDR. Acidic SDR, using a simple mixture of HF, HNO₃, and CH₃COOH, produced uniformly etched surfaces that led to well-defined pyramid structures after alkaline texturization. This improved morphology enhanced surface passivation, resulting in a higher effective minority carrier lifetime of ~ 2.0&#xa0;ms from ~ 1.2&#xa0;ms and a reduction in the c-Si/a-Si:H interface defect density (D<sub>it</sub>) to ~ 1.16 × 10⁹ from ~ 2.1 × 10⁹ cm⁻<sup>2</sup>&#xa0;eV⁻<sup>1</sup> compared to alkaline SDR. SHJ solar cells fabricated with the acidic SDR approach achieved superior performance, with a power conversion efficiency of ~ 22.0%, open-circuit voltage of ~ 733&#xa0;mV, and fill factor of ~ 77.72%, outperforming those using alkaline SDR, having ~ 20.5%, ~ 730&#xa0;mV, and ~ 76.04%, respectively. These findings demonstrate that even in the absence of chemical additives, acidic SDR effectively improves wafer surface morphology and device performance, offering an efficient approach for SHJ solar cell fabrication.</p>

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Effect of Additive-Free Acidic Saw Damage Removal on Silicon Surface Morphology and Interface Electronic Properties in Heterojunction Solar Cells

  • 期刊论文

  • 发表日期：

    2025年9月27日

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  • Manisha Siwach,
  • Shrestha Bhattacharya,
  • Shahnawaz Alam,
  • Silajit Manna,
  • Ashutosh Pandey,
  • Son Pal Singh,
  • Vamsi Krishna Komarala

摘要

This study examines the effect of acidic versus alkaline saw damage removal (SDR) processes on the silicon surface morphology, interface electronic properties, and performance of silicon heterojunction (SHJ) solar cells, without employing any additional additives during SDR. Acidic SDR, using a simple mixture of HF, HNO₃, and CH₃COOH, produced uniformly etched surfaces that led to well-defined pyramid structures after alkaline texturization. This improved morphology enhanced surface passivation, resulting in a higher effective minority carrier lifetime of ~ 2.0 ms from ~ 1.2 ms and a reduction in the c-Si/a-Si:H interface defect density (Dit) to ~ 1.16 × 10⁹ from ~ 2.1 × 10⁹ cm⁻2 eV⁻1 compared to alkaline SDR. SHJ solar cells fabricated with the acidic SDR approach achieved superior performance, with a power conversion efficiency of ~ 22.0%, open-circuit voltage of ~ 733 mV, and fill factor of ~ 77.72%, outperforming those using alkaline SDR, having ~ 20.5%, ~ 730 mV, and ~ 76.04%, respectively. These findings demonstrate that even in the absence of chemical additives, acidic SDR effectively improves wafer surface morphology and device performance, offering an efficient approach for SHJ solar cell fabrication.